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Preparation method of quantum well infrared detector material

An infrared detector and quantum well technology, which is applied in the application field of quantum well infrared detection technology, can solve problems such as troubles and adding impurity particles in multiple processes, and achieve the effects of improving crystal quality, eliminating thinning steps, and improving performance

Active Publication Date: 2018-04-13
CHAOJING TECH BEIJING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the surface roughness caused by the spallation process brings great troubles to the follow-up work. If the spallation layer is used as a sacrificial layer and treated by etching, it will also add more processes and even easily introduce impurity particles.

Method used

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  • Preparation method of quantum well infrared detector material
  • Preparation method of quantum well infrared detector material

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Embodiment 1

[0034] The following takes the process of heterogeneous integration of GaAs and silicon-based substrates as an example to illustrate the process steps of using aluminide that is easily oxidized in the air as the sacrificial layer to realize the reuse of the donor substrate. These structures and preparation steps can be directly extended to other types In the heterogeneous integration of silicon-based substrates, the specific structure can be as figure 2 Shown. The specific process steps are as follows:

[0035] (1) Growing a 550nm GaAs buffer layer on a GaAs substrate;

[0036] (2) A 600nm AlAs sacrificial layer is grown on the buffer layer;

[0037] (3) A 200nm GaAs thin film layer is grown on the sacrificial layer; see the structure formed at this time figure 1 A. At this time, from top to bottom, GaAs film layer, sacrificial layer, buffer layer, semiconductor substrate (donor substrate);

[0038] (4) Perform hydrogen ion implantation from the top, the energy of ion implantation ...

Embodiment 2

[0044] In this embodiment, except that the selected donor substrate is an InP substrate, and an InP buffer layer and an InAlAs sacrificial layer are grown thereon, the semiconductor film grown is an InP film, and the rest are ordinary quantum wells on the InP substrate. The structure and method of the infrared detector are operated according to the first embodiment.

Embodiment 3

[0046] In this embodiment, except that the selected donor substrate is a GaSb substrate, and a GaSb buffer layer and an AlSb sacrificial layer are grown thereon, the grown semiconductor film is a GaSb film, and the rest are ordinary quantum wells on the GaSb substrate The structure and method of the infrared detector are operated according to the first embodiment.

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Abstract

The invention discloses a preparation method of a quantum well infrared detector material, which comprises the steps of providing a semiconductor donor substrate, epitaxially growing a buffer layer onthe semiconductor donor substrate, then growing a sacrificial layer on the buffer layer, and then growing a semiconductor thin film layer on the sacrificial layer; performing ion implantation on a semiconductor chip by taking the semiconductor thin film layer as an implantation surface, forming a defect layer in the sacrificial layer, then enabling the semiconductor thin film layer to be bonded with the front of a receptor substrate, performing annealing processing on the bonding structure, then stripping the semiconductor thin film layer from the donor substrate along the defect layer, acquiring a first substrate containing the donor substrate and a second substrate containing the receptor substrate, and then growing a quantum well infrared detector structure on the second substrate withthe sacrificial layer being removed. According to the preparation method, an aluminum-containing compound is adopted to serve as the sacrificial layer, the process of the sacrificial layer is simplified by using a characteristic that the aluminum-containing compound is easy to be oxidized after lamination cracking, and the surfaces of the obtained receptor substrate material and the semiconductordonor substrate material are enabled to be clean.

Description

Technical field [0001] The invention belongs to the application field of quantum well infrared detection technology, and in particular relates to a preparation method of a quantum well infrared detection device in which a donor substrate can be reused and a thinning process is omitted. Background technique [0002] With the development of military defense, aerospace and other fields, the demand for large-area infrared focal plane arrays with high detection efficiency, fast response speed, wide spectral band, high integration density, and good uniformity is becoming stronger . At present, mercury cadmium telluride detectors, which are widely used in mid-infrared and far-infrared, have significant advantages in quantum efficiency, detection rate, and operating temperature, but the growth process has severe challenges such as material stability and large-area growth Problems such as uniformity have severely restricted its development towards a large area infrared focal plane array ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0352
CPCH01L31/035236H01L31/1844H01L31/1892Y02P70/50
Inventor 王庶民王利娟
Owner CHAOJING TECH BEIJING CO LTD