Mathematical model based flash memory chip lifetime prediction method

Abstract

Belonging to flash memory chip lifetime prediction technologies, the invention in particular relates to a mathematical model based flash memory chip lifetime prediction method. The method includes: firstly using a flash memory chip test system to collect the physical information and lifetime information of a sample flash memory chip, then conducting operation processing on the data information obtained by testing through intelligent algorithm to obtain a flash memory chip lifetime prediction model, finally carrying out a few tests to obtain the physical information of the to-be-predicted flashmemory chip, and inputting the physical information into the prediction model to obtain a predicted lifetime value of the flash memory chip. The flash memory sample test method provided by the invention employs constrained random data as the test data set to perform testing, can more effectively simulate the data operation of the flash memory chip in the actual use process, and the obtained flashmemory physical information and lifetime information are more valuable.

Description

Technical field [0001] The invention belongs to the life prediction technology of flash memory chips, and particularly relates to a method for life prediction of flash memory chips based on a mathematical model. Background technique [0002] In the modern electronic information industry, memory has always played a very important role as a carrier for storing data in electronic equipment. At present, the memory on the market is mainly divided into: volatile memory and non-volatile memory. Flash memory chip is a kind of non-volatile memory, which can save data for a long time after power failure, and has the advantages of fast data transmission speed, low production cost, large storage capacity, etc., so it is widely used in electronic equipment. [0003] At present, due to the continuous progress of semiconductor manufacturing technology, the reduction of the distance between memory cells and the reduction of oxide layer thickness, the inherent errors in flash memory chips are beco...

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Problems solved by technology

[0003] At present, due to the continuous improvement of semiconductor manufacturing technology, the reduction of the distance between memory cells and the reduction of the thickness of the oxide layer make the inherent errors in flash memory chips more and more serious. The traditional error correction code method has been unable to meet the reliability requirements of flash memory chips. , the reliability of flash memory has become an important topic in the field of memory research

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