Unlock instant, AI-driven research and patent intelligence for your innovation.

Transistors and methods of forming them

A transistor and graphics technology, applied in the direction of transistors, semiconductor devices, electric solid devices, etc., can solve the problem that the electrical performance of transistors needs to be improved, and achieve the effect of reducing photoresist residue, removing completely, and improving electrical performance.

Active Publication Date: 2020-09-08
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the electrical performance of transistors formed by existing technologies still needs to be improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Transistors and methods of forming them
  • Transistors and methods of forming them
  • Transistors and methods of forming them

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] It can be seen from the background art that the electrical performance of the transistor formed in the prior art still needs to be improved. Combining with the formation method of the prior art, the reasons for the poor electrical performance of the transistor are analyzed. refer to Figure 1 to Figure 6 , shows a structural schematic diagram corresponding to each step of a method for forming a transistor. The method for forming the transistor includes the following steps:

[0035] refer to figure 1 , forming a substrate 100 including a core region I and a peripheral region II. The core region I substrate 100 has a first fin 110 on it, and the peripheral region II substrate 100 has a second fin 120 on it.

[0036] refer to figure 2 , figure 2 It is a schematic cross-sectional structure view along the extending direction of the first fin 110 and the second fin 120, and the first fin 110 is formed on the substrate 100 across the first fin 110 and covers part of th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a transistor and a forming method thereof. The forming method comprises the steps of forming a substrate including a core zone and a peripheral zone; forming a first fake-grid structure and a second fake-grid structure respectively on the substrates of the core zone and the peripheral zone, wherein the first fake-grid structure comprises a first gate oxide and a first fake-grid electrode layer, and the second fake-grid structure comprises a second gate oxide and a second fake-grid electrode layer; removing the first fake-grid electrode layer and the second fake-grid electrode layer, and forming a first opening and a second opening in a dielectric layer on the substrate between the fake-grid structures; forming a first barrier layer covering the sidewall and bottom ofthe first opening and the dielectric layer of the core zone, and forming a second barrier layer covering the sidewall and bottom of the second opening and the dielectric layer of the peripheral zone;forming a photoresistive image which fills the second opening and covers the peripheral area; removing the first gate oxide and the first barrier layer; removing the photoresistive image; removing the second barrier layer; forming a grid structure in the first opening and the second opening. The forming method can improve the electric performance of the transistor.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a transistor and a forming method thereof. Background technique [0002] In semiconductor manufacturing, with the development of VLSI, the feature size of integrated circuits continues to decrease. In order to adapt to the reduction of feature size, the channel length of MOSFET devices is also continuously shortened. However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, so the control ability of the gate to the channel becomes worse, and the gate voltage pinches off the channel. The difficulty is also increasing, making the phenomenon of subthreshold leakage (subthreshold leakage), the so-called short-channel effect (SCE: short-channel effects) more likely to occur. [0003] Therefore, in order to better adapt to the reduction of feature size, the semiconductor process has gradually begun to transi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/027H01L21/8234H01L27/088H01L29/423
CPCH01L21/0274H01L21/823431H01L21/823462H01L27/0886H01L29/42364
Inventor 周飞
Owner SEMICON MFG INT (SHANGHAI) CORP