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Preparation method of silicon dioxide nanosphere array-VO2 thin film composite structure

A silicon dioxide, -VO2 technology, applied in the direction of ion implantation plating, coating, metal material coating process, etc., to achieve large-area production, simple preparation process, and achieve the effect of offset

Inactive Publication Date: 2018-05-04
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Recently, some foreign research groups have used VO 2 thin films covered in SiO of different sizes 2 The ball array is used to adjust the transmittance of visible light to change the color of the film [4] , so as to change the color of the window, there is little for VO 2 Report on the change of the transmittance and the color of the film caused by the preparation of the spherical shell array and the change of the preparation parameters

Method used

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  • Preparation method of silicon dioxide nanosphere array-VO2 thin film composite structure
  • Preparation method of silicon dioxide nanosphere array-VO2 thin film composite structure
  • Preparation method of silicon dioxide nanosphere array-VO2 thin film composite structure

Examples

Experimental program
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Effect test

Embodiment 1

[0027] (1) Substrate cleaning: The substrate used is a double-polished sapphire substrate with (001) crystal plane, 1×1cm 2 , with a thickness of 0.45mm; put the substrate into deionized water, acetone and absolute ethanol in order to ultrasonically clean it for 20 minutes respectively to remove organic impurities on the surface; after cleaning, put the substrate into absolute ethanol for later use.

[0028] (2) Preparation of monodisperse SiO 2 mask layer:

[0029] First, insert the clean drainage sheet obliquely into a certain amount of deionized water, and then use a pipette gun to dissolve SiO with a particle size of 600nm 2 The ball solution is added dropwise to the drainage sheet, and it slowly flows to the water surface, and spreads evenly to form a high-density, large-area single-layer SiO 2 Array, thus formulated as a lifting solution. After standing still until the liquid level is stable, slowly fix the substrate with a coating puller and immerse it in the pulling...

Embodiment 2

[0038] (1) Substrate cleaning: The substrate used is a double-polished sapphire substrate with (001) crystal plane, 1×1cm 2 , with a thickness of 0.45mm; put the substrate into deionized water, acetone and absolute ethanol in order to ultrasonically clean it for 30 minutes, respectively, to remove organic impurities on the surface; after cleaning, put the substrate into absolute ethanol for later use.

[0039] (2) Preparation of monodisperse SiO 2 mask layer:

[0040] First, insert the clean drainage sheet obliquely into a certain amount of deionized water, and then use a pipette gun to dissolve SiO with a particle size of 600nm 2 The ball solution is added dropwise to the drainage sheet, and it slowly flows to the water surface, and spreads evenly to form a high-density, large-area single-layer SiO 2 Array, thus formulated as a lifting solution. After standing still until the liquid level is stable, slowly immerse the substrate in the pulling liquid with a coating pulling ma...

Embodiment 3

[0046] (1) Substrate cleaning: The substrate used is a double-polished sapphire substrate with (001) crystal plane, 1×1cm 2 , with a thickness of 0.4mm; put the substrate into deionized water, acetone and absolute ethanol in order to ultrasonically clean it for 30 minutes, respectively, to remove organic impurities on the surface; after cleaning, put the substrate into absolute ethanol for later use.

[0047] (2) Preparation of monodisperse SiO 2 mask layer:

[0048] First, insert the clean drainage sheet obliquely into a certain amount of deionized water, and then use a pipette gun to dissolve SiO with a particle size of 600nm 2 The ball solution is added dropwise to the drainage sheet, and it slowly flows to the water surface, and spreads evenly to form a high-density, large-area single-layer SiO 2 Array, thus formulated as a lifting solution. After standing still until the liquid level is stable, slowly immerse the substrate in the pulling liquid with a coating pulling m...

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Abstract

The invention discloses a preparation method of a silicon dioxide nanosphere array-VO2 thin film composite structure. The preparation method is characterized in that the structure with a VO2 thin filmdeposited on a silicon dioxide nanosphere array is prepared by utilizing a dip-coating process and a magnetron sputtering coating process, preparation parameters of the vanadium dioxide (VO2) thin film are adjusted by adjusting the rapid thermal annealing mode, and the change rule of structural transmittance is explored by means of a Fourier transform infrared spectrometer. According to the preparation method of the silicon dioxide nanosphere array-VO2 thin film composite structure, the structural color displayed by combining a vanadium dioxide spherical shell and silicon dioxide material canbe used for adjusting the color of an intelligent window, and therefore composite material with higher application value can be developed.

Description

technical field [0001] The invention relates to the vanadium dioxide preparation technology for smart windows, in particular to a silica nanosphere array-VO 2 Preparation method of thin film composite structure. Background technique [0002] Building energy consumption accounts for about 20-40% of the total energy consumption in developing countries. In 2006, building energy consumption accounted for 26% of my country's total social energy consumption, and it is expected that by 2020 this proportion will rise to more than 30%. The energy consumed to maintain the internal temperature of a building accounts for a considerable proportion of building energy consumption. As the most important heat exchange channel between buildings and the external environment, windows account for 50% of the heat inflow or loss from buildings. It can be said that window energy saving is the key link of building energy saving. Vanadium dioxide (VO 2 ) is a temperature-sensitive material that ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/18C23C14/58B05D7/24
CPCC23C14/35B05D7/24C23C14/185C23C14/5853
Inventor 梁继然李鹏宋晓龙周立伟郭津榜
Owner TIANJIN UNIV
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