46results about How to "Realize large area production" patented technology

The invention discloses a roll-to-roll process method for preparing a high-performance nanometer silver wire transparent conductive thin film. The roll-to-roll process method sequentially involves an unwinding module, a coating module, a composite module and a winding module, wherein the coating module sequentially comprises a surface processing module, a coating device and a conductivity enhancement module, and the composite module sequentially comprises a curing adhesive composite module, a curing module and a stripping module. The invention provides a roll-to-roll process for preparing the high-performance nanometer silver wire conductive thin film, the means is simple, the cost is low, and large-area production of the high-performance flexible transparent conductive thin film can be achieved.

Disclosed are a flexible liquid crystal thin film material having the transmittance varying with the temperature and a film preparation method. Nematic liquid crystal, a chiral compound, biphenyl cyanogen liquid crystal, a liquid crystal polymerizable monomer, an acrylate monomer, glass beads, and an initiator are mixed according to a certain ratio and are uniformly stirred at 20-50 DEG C, the obtained mixture is poured into the middle part between two layers of polyester films coated with ITO conducting layers, the obtained film is subjected to rubber roll extrusion, and the obtained liquid crystal film is subjected to ultraviolet light polymerization in a power-on state so as to obtain a flexible liquid crystal thin film having the transmittance varying with the temperature. The prepared flexible liquid crystal thin film is transparent at a low temperature, the transmittance of the film increases as the temperature rises, and when the temperature reaches a certain value, the thin films converts to a transmittance state from the transparent state. The thin film has the characteristics of high response speed, high contrast and high infrared light and ultraviolet light resisting rate, can be applied to the fields of buildings and automobiles, and is an excellent energy-saving material. The film preparation method plays a significant part in promotion of development process of a thin-film material.

The embodiment of the invention provides a preparation method of a perovskite solar cell. The method comprises the steps of depositing a p-type organic conductive layer on indium tin oxide (ITO) conductive glass; depositing a CH3NH3PbI3 layer with an organic-inorganic hybrid perovskite structure on the p-type organic conductive layer by adopting an ultrasonic spraying method; depositing an n-type organic conductive layer on the CH3NH3PbI3 layer; and depositing a metal electrode layer on the n-type organic conductive layer. The technical scheme provided by the invention has the beneficial effects that preparation is carried out by using the ultrasonic spraying method, the utilization rate of raw materials can be improved, the production cost is reduced, and large-scale production is realized.

The invention relates to a preparation method of a tiny graph. The method comprises the steps of coating a light-sensitive surface on the surface of a substrate, and arranging a microlens array above the light-sensitive surface; arranging a tiny graph mask above the microlens array; arranging an ultraviolet lamp light source above the mask; when an ultraviolet lamp is turned on, realizing nested photoetching of the light-sensitive surface by the reduced exposure for masked graph; finally, taking out the substrate coated with the light-sensitive surface, and developing to obtain the needed tiny structure. After the method is adopted, the tiny graph and a large-area structure can be manufactured.

The invention discloses a transferable patterned conductive thin film structure and a patterning method thereof. An adhesion enhancement layer, a conductive layer and a photosensitive film layer are formed on a transfer substrate, patterning processing is performed in the case of ensuring connection stability between the conductive layer and the substrate to form a transferable conductive pattern, and finally, the conductive pattern can be transferred to a target substrate through the transfer substrate. The conductive thin film structure of the invention provides a high stability transferable conductive pattern compatible with large area mass production, provides a solution for special shape, curved and stick-on electronic devices, and has high application prospects.

The invention discloses a preparation method of a tungsten ditelluride nanobelt. The method comprises the following steps: firstly, placing a polished surface of a substrate on a graphite sheet upwards, then covering a silicon wafer with a tungsten foil subjected to oxidation treatment, and placing a gasket between the substrate and the tungsten foil so as to form a micro-reaction cavity of a sandwich-like structure. On the basis of adopting a space confinement strategy, a reaction precursor is designed at the same time, and the tungsten foil subjected to oxidation treatment is used for providing a tungsten source, so that controllable preparation of the tungsten ditelluride nanobelt is realized. By controlling the oxidation time of the tungsten foil at high temperature, the size and morphology of the tungsten ditelluride nanobelt are effectively regulated and controlled. Meanwhile, controllable growth of the tungsten ditelluride nanobelt on different substrates such as sapphire, mica and glass is realized. According to the method, controllable preparation of the large-area WTe2 nanobelt can be realized, and a new synthesis path is provided for industrial application of the WTe2 nanobelt.

The invention is applicable to the printing and displaying technology field and provides a preparation method for a trapezoid pixel Bank structure and an OLED device. The preparation method for the trapezoid pixel Bank structure comprises steps of providing a TFT backboard, preparing a Bank layer on the electrode of the TFT backboard, performing two times of exposure, development and etching on the Bank layer to form an inverted trapezoid pixel area, and obtaining a trapezoid pixel Bank structure having the trapezoid Bank. The preparation method for the trapezoid pixel Bank can effectively compensate the transverse corrosion for the pixel Bank by the developing liquid and corrosive liquid and can overcome the affect on the uniformity of the member pixel caused by the over-etching on the bottom of the Bank. In the meantime, the invention adopts the exposure mode of concentrating light first and scanning then to perform exposure processing on the positive Bank material, which improves the pixel accuracy of the display member and thus improves the resolution of the printing display member.

The present invention discloses a nano cold cathode electron source with a dual gate-all-around structure, which comprises a substrate, an insulating layer, a bottom cathode electrode, a bottom segmented ring-shaped gate electrode, etched through holes, a top cathode electrode, a top ring-shaped gate electrode, a growth source film and a nanowire cold cathode. The top ring-shaped gate electrode isrespectively connected with the bottom segmented ring-shaped gate electrode through the etched through holes. A method for preparing the nano cold cathode electron source with the dual gate-all-around structure is also disclosed and comprises the following steps: the bottom cathode electrode, the bottom segmented ring-shaped gate electrode, the insulating layer, the etched through holes, the topcathode electrode and the top ring-shaped gate electrode are manufactured; the growth source film is deposited; and the nanowire cold cathode grows through thermal oxidation. The nano cold cathode electron source has the strong grid-controlled electron emission capability and the row-and-column addressable dual gate-all-around structure.

The invention discloses a method for preparing a metal conductive film with a flexible substrate. The invention realizes the continuous and large-area production of the flexible conductive film, greatly shortens the production cycle, greatly improves the productivity and reduces the production cost, and solves the problem of the flexible metal film. The problem of large-area continuous production of network transparent conductive films. Metal nanoparticles are grown on top of graphene in situ. This method has a lower contact barrier than simply mixing graphene and metal nanoparticles. Metal nanoparticles The electrons in the graphene are more likely to migrate to the graphene, so that the carriers in the graphene become more, and the graphene itself has a higher carrier mobility, and the graphene and the metal nanoparticles grown on it form a synergistic Enhancement effect, the transparent conductive film prepared by the invention has better conductivity.

The invention relates to a technology for making a high-strength waterproof composite vertical corrugated board. The technology comprises the following steps: making a kraft paper, and respectively winding the kraft paper around a first paper roller to a seventh paper roller which are sequentially arranged top to bottom; arranging the first paper roller at the feeding port of the upper surface paper channel of a double-sided machine, molding the kraft paper on the second paper roller by an E corrugating machine to form an E corrugated paper, arranging the third paper roller and the fifth paperroller at the feeding port of the core layer paper channel of the double-sided machine, molding the kraft papers on the fourth paper roller and the sixth paper roller by a C corrugating machine to form a C corrugated paper, and arranging the seventh paper roller at the feeding port of the bottom surface paper channel of the double-sided machine; arranging the output end of the double-sided machine at the feeding port of a compounding device, outputting all papers through the double-sided machine, feeding all the papers into the compounding device, and performing drying to obtain a finished product, wherein compacting rollers for compacting the board are arranged in a drying channel; and cutting the finished board as demanded, and warehousing the cut finished board. The composite corrugated board made by the technology has a high strength and a high compression resistance, and is suitable for all kinds of exquisite packaging.

The invention discloses a preparation method of metal surface plasmon polariton-CdSe composite porous anodes. Specifically, gold nano particles of certain densities and certain sizes are deposited on the surface of conducting glass by the adoption of a three-electrode system and the utilization of an electrochemical method, CdSe quantum dots are deposited on the surfaces of the gold nano particles of the conducting glass through the utilization of the electrochemical method to obtain gold nano particle-CdSe quantum dot composite anodes, and annealing treatment is carried out on the gold nano particle-CdSe quantum dot composite anodes in an inert atmosphere under the condition of 400-450 DEG C to obtain gold nano particle-CdSe quantum dot composite porous anodes. The gold nano particle-CdSe quantum dot composite porous anodes of multi-layer structures are constructed through the fact that the steps are repeated. According to the preparation method of the metal surface plasmon polariton-CdSe composite porous anodes, surface plasmon polariton enhancement effects of the gold nano particles are used, absorption efficiency of incident light is effectively enhanced, photoelectric currents are improved, the multi-layer structures prolong a travel path of light, and light absorption is benefited. The preparation method of the metal surface plasmon polariton-CdSe composite porous anodes is simple in operation of a preparation technology, easy to achieve, low in cost, and high in efficiency.

The invention discloses a manufacture method of an electrode, a TFT and a manufacture method thereof, an array substrate and a display panel, and aims at reducing the production cost and realizing large-area production. The manufacture method of the electrode comprises that at least one hydrophobic structure with a hydrophobic property is manufactured on a substrate, and each hydrophobic structurecomprises a hydrophobic projection positioned in the edge area and a hydrophobic film positioned in the middle area; the a hydrophobic film is removed; a conductive solution is made on the at least hydrophobic projection so that the hydrophobic projection is infiltrated with the conductive solution to form electrodes positioned at the two sides of the hydrophobic projection; and the hydrophobic projection is removed.

The invention discloses a Fe-doped ZnO nano-film as well as a preparation method and application thereof. A Fe-doped ZnO nano-material is successfully prepared on a GPET transparent conductive flexible substrate through a hydrothermal method, the photocatalytic performance of the Fe-doped ZnO nano-material is researched. Zinc nitrate hexahydrate, hexamethylenetetramine and ferric nitrate nonahydrate are taken as main reactants, firstly ion sputtering is conducted on the surface of a flexible substrate GPET to obtain a very thin ZnO seed crystal layer; then Fe-doped ZnO precursor solutions withdifferent concentrations are prepared; and the flexible substrate is vertically put in a reaction solution, and a Fe-doped ZnO nano structure is grown by a hydrothermal method to obtain the Fe-ZnO / GPET nano composite material which can be used as a photocatalyst. The product obtained through the hydrothermal reaction has a special regular hexagonal nanorod-like structure, has a strong degradationeffect on a methylene blue solution, has a wide research prospect in the fields of environmental governance and the like, and is suitable for large-area production and application.

A method for preparing a one-dimensional nanomaterial-based sensor is disclosed. The method includes dropping a suspension of a one-dimensional nanomaterial onto a substrate; combing the suspension onthe substrate with a tool brush in a constant speed; then allowing the product to stand; drying the substrate so that the one-dimensional nanomaterial is more closely bonded with the substrate through the van der Waals force; after photoresist removing, allowing the solution on the surface of the substrate to volatize so that the one-dimensional nanomaterial is uniformly arranged on the substratein a large area; forming an interdigital electrode pattern through a photoetching process; and stripping after the substrate surface is plated with gold to obtain the one-dimensional nanomaterial-based sensor. The sensor has characteristics of excellent electrical properties and high sensitivity. The method is suitable for a plurality of one-dimensional nanomaterials such as zinc oxide and silicon, and is suitable for different substrates such as silica and glass. The distribution density and arrangement uniformity of the one-dimensional nanomaterial can be achieved through changing the dimension of an assembling tool, and large-area production is hoped to be possible if a large-dimension precise mechanical assembling tool is put into use. The method has a wide application prospect in thefield of manufacturing and integration of nanometer devices.

The invention discloses a preparation method of a silicon dioxide nanosphere array-VO2 thin film composite structure. The preparation method is characterized in that the structure with a VO2 thin filmdeposited on a silicon dioxide nanosphere array is prepared by utilizing a dip-coating process and a magnetron sputtering coating process, preparation parameters of the vanadium dioxide (VO2) thin film are adjusted by adjusting the rapid thermal annealing mode, and the change rule of structural transmittance is explored by means of a Fourier transform infrared spectrometer. According to the preparation method of the silicon dioxide nanosphere array-VO2 thin film composite structure, the structural color displayed by combining a vanadium dioxide spherical shell and silicon dioxide material canbe used for adjusting the color of an intelligent window, and therefore composite material with higher application value can be developed.

The invention discloses a nanometer cold cathode electron source of a coplanar double-gate focusing structure, which comprises a substrate, an insulating layer, a bottom-layer segmented cathode electrode, a bottom-layer gate electrode, an etching through hole, a top-layer annular cathode electrode, a top-layer internal gate electrode, a top-layer external annular gate electrode, a growth source thin film, a nanowire cold cathode and a focusing electrode, wherein the top-layer internal gate electrode and the top-layer external annular gate electrode are connected with the bottom-layer gate electrode through the etching through hole, and the top-layer annular cathode electrode is connected with the bottom-layer segmented cathode electrode through the etching through hole. The invention further discloses a preparation method of the nanometer cold cathode electron source of the coplanar double-gate focusing structure. The nanometer cold cathode electron source has strong gate-control electron emission capability and electron beam focusing capability and has a coplanar double-gate focusing structure capable of row and column addressing.

The invention discloses a patterned photochromic transparent film and a preparation method thereof. The method comprises the following steps: forming a photochromic material on the surface of a prepared nanofiber film according to a desired pattern, performing covering by using epoxy resin, and performing curing to obtain the patterned photochromic transparent film. Through the above manner, the opaque nanofiber film shows a transparent state under the action of the epoxy resin, so that the effective protection of the photochromic material is realized and the service life is prolonged withoutaffecting light transmission; the synergy between the nanofiber film and the epoxy resin is used, so that the non-patterned area of the prepared photochromic transparent film has higher transparency,and the photochromic transparent film has better mechanical properties; and the preparation process is simple, the content and pattern shape of the photochromic material can be freely selected according to needs, the controllability is strong, large-area production can be realized, and the practical application range is wide.

The invention discloses a preparation method of an angle-insensitive reflective plasma structural color. The method comprises the following steps: etching a cylindrical hole array on a quartz plate; soaking in nitric acid to remove an Ag film, cleaning and drying; after calcining, carrying out ion beam etching, and sending to a glove box to obtain a spin-coated quartz substrate; placing the solid sodium block on a heating table for heating until the solid sodium block is molten into liquid sodium; stripping oxides and the like on the shell to obtain liquid sodium with metallic luster on the surface; and dripping on a quartz plate for curing, and packaging with glass to obtain the reflection-type angle-insensitive structural color device. According to the invention, a spin-coating mode is adopted, a metal micro-nano structure is constructed, and a specific reflective structural color is generated by regulating and controlling a plasmon resonance wavelength; because the metallic sodium has the characteristics of low penetration depth in the visible band, weak coupling of the adjacent micro-nano structure and the like, the reflection type structural color generated by the metallic sodium micro-nano structure has the property of angle insensitivity; the method can be applied to multiple fields of sensing, information storage and the like.

The invention belongs to the field of display devices, and provides a light conversion device, a preparation method thereof and an infrared imaging device. According to the light conversion device provided by the present invention, a photosensitive member and a light-emitting member are arranged side by side on a substrate and connected through a gain member, thereby realizing the gain effect of the device, so that the device has higher light-sensing light-emitting efficiency. Due to the compact structure, small size and light weight of the device, the requirements for portable imaging of thedevice are met. Because each pixel has a simple structure and low process difficulty, each pixel is suitable for the existing printing preparation process. The cost is reduced, and a large area of replication can be achieved.

The invention belongs to the field of display devices, and provides a light conversion device, a preparation method thereof and an infrared imaging device. The light conversion device provided by thepresent invention is formed by juxtaposing a photosensitive member and a light-emitting member on a substrate and connecting the photosensitive member and the light-emitting member through a first electrode. When the device is in operation, the photosensitive member converts input non-visible light signals into photogenerated electrons, and the photogenerated electrons are injected into the lightemitting member through a first electrode to drive the light-emitting member to emit visible light, so that the device has high light-sensing light-emitting efficiency. At the same time, due to the compact structure, small size and light weight of the device, the requirements for preparing a portable infrared imaging device are met. The preparation method of the light conversion device has simplepreparation process and is suitable for large-area preparation.

The invention relates to a three-way catalyst for hydrogen used for preparing fuel cells and a preparation method of the three-way catalyst, and belongs to the field of photocatalytic hydrogen generation materials. The preparation method of the three-way nanosheet catalyst used for photocatalytic hydrogen generation comprises the following steps that 1, stannic chloride, thioacetamide and seleniumdioxide are mixed, dissolved into a tetraethylene glycol solution by adding an additive, and stirred to be completely dissolved, a mixed solution is obtained, and then the mixed solution is sealed; 2, the sealed mixed solution is standing in a rotating magnetic field for heating to 200-250 DEG C, and heat preservation is conducted for 15-24 hours; 3, the mixed solution obtained after heat preservation is naturally cooled to room temperature, and then subjected to centrifugal separation, precipitation and drying, and the three-way nanosheet material is prepared. The three-way nanosheet catalyst used for photocatalytic hydrogen generation not formed by assembling small nanosheets and is uniform and compact in overall structure, modification on the surface is facilitated, and meanwhile, thechemical performance of the nanosheet material is improved. The three-way catalyst is suitable for scale production of the raw material hydrogen for the fuel cell.

The invention discloses a method for improving the red light emission efficiency of an amorphous silicon carbide film, and belongs to the technical field of nanometer optoelectronic device materials. The method comprises the following steps of fixing a substrate to the upper surface of a lower polar plate of a capacitance polar plate in a parallel plate capacitive radio-frequency plasma enhanced chemical vapor deposition system, and meanwhile heating the substrate; introducing a mixed gas of silane and methane into a reaction cavity; setting a flow ratio of the silane to the methane in the mixed gas according to a preparation process for the amorphous silicon carbide film, introducing micro-flow ammonia gas on this basis, and meanwhile adjusting an extraction opening of a reaction chamber so that the air pressure of the reaction chamber is kept at 20Pa; and adding a radio frequency signal to the upper polar plate of the capacitance polar plate, and controlling the growth time. According to the method, the red light emission efficiency of the amorphous silicon carbide film can be improved by 4 times and above, and the nitrogen-doped silicon-rich amorphous silicon carbide film with strong red light emission and prepared by the method can be compatible with the current microelectronic process and is easy to use.

The invention provides a self-circulating aerosol cultivation method. The cultivation method comprises the following steps: a, at least one mist pipeline is arranged inside at least one culture support body, a liquid supply pipeline, the mist pipeline, the culture support body, a return pipeline, an automatic liquid feeder and a containing tank form a closed circulating space, a plurality of sprayparts are arranged on the mist pipeline, and a plurality of culture parts are arranged on the culture support body; b, culture objects are placed in the culture parts; and c, a liquid is conveyed tothe mist pipeline through the liquid supply pipeline, the liquid is sprayed out through the spraying parts, the residual liquid is collected into the culture support body after the liquid is sprayed out by the spraying parts, and the residual liquid flows back into the culture support body through the return pipeline. The method provided by the invention realizes large-area production of aerosol cultivation.

The invention discloses an aeroponic cultivation method. The method comprises the following steps: a, at least one mist pipeline is arranged in at least one cultivation supporting body, the mist pipeline is provided with a plurality of mist spraying parts, and the cultivation supporting body is provided with a plurality of cultivation parts; b, cultivated objects are placed into the cultivation parts; c, a liquid is conveyed to the mist pipeline through a liquid supply pipeline, and the liquid is sprayed out through the mist spraying parts; and d, a remaining residual liquid obtained after theliquid is sprayed from the mist spraying parts is collected into the cultivation supporting body, and the residual liquid is conveyed to an accommodating pool through a backflow pipeline. The aeroponic cultivation method disclosed by the invention realizes large-area large-scale production of aeroponic cultivation.