Method for improving red light emission efficiency of amorphous silicon carbide film

A luminous efficiency, silicon carbide technology, applied in chemical instruments and methods, luminescent materials, gaseous chemical plating, etc., to achieve the effects of high reliability, easy practicality, and improved red light emission efficiency

Pending Publication Date: 2021-06-22
HANSHAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, no N-doping effect on enhancing a-SiC x Study on Red Emission of Thin Films

Method used

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  • Method for improving red light emission efficiency of amorphous silicon carbide film
  • Method for improving red light emission efficiency of amorphous silicon carbide film
  • Method for improving red light emission efficiency of amorphous silicon carbide film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] a) In the flat capacitive RF plasma-enhanced chemical vapor deposition equipment, adjust the distance between the upper and lower plates of the capacitor plate to 2.5 cm, and ground the lower plate of the capacitor plate.

[0024] b) SiH 4 and CH 4 The gas is passed into the reaction chamber, SiH 4 and CH 4 The gas flow ratio is 3.5sccm:5sccm.

[0025] c) Ammonia gas (both with a purity of 99.9999%) is passed into the reaction chamber, and the flow rate of the ammonia gas is adjusted to 0.5 sccm, and the air extraction port of the reaction chamber is adjusted to keep the pressure of the reaction chamber at 20 Pa.

[0026] d) Apply a radio frequency signal with a radio frequency power of 30W and a radio frequency of 40.68MHz to the upper plate, control the growth time for 30 minutes, and the growth temperature at 250°C.

[0027] e) Utilize xenon lamp 350nm ultraviolet light to irradiate the thin film prepared in step d), the relationship between its photo-induced red...

Embodiment 2

[0030] a) In the flat capacitive RF plasma-enhanced chemical vapor deposition equipment, adjust the distance between the upper and lower plates of the capacitor plate to 2.5 cm, and ground the lower plate of the capacitor plate.

[0031] b) SiH 4 and CH 4 The gas is passed into the reaction chamber, SiH 4 and CH 4 The gas flow ratio is 3.5sccm:5sccm.

[0032] c) Ammonia gas (both with a purity of 99.9999%) is passed into the reaction chamber, and the flow rate of the ammonia gas is adjusted to 1.0 sccm, and at the same time, the air inlet of the reaction chamber is adjusted to keep the pressure of the reaction chamber at 20 Pa.

[0033] d) Apply a radio frequency signal with a radio frequency power of 30W and a radio frequency of 40.68MHz to the upper plate, control the growth time for 30 minutes, and the growth temperature at 250°C.

[0034] e) Utilize xenon lamp 350nm ultraviolet light to irradiate the thin film prepared in step d), the relationship between its photo-ind...

Embodiment 3

[0037] a) In the flat capacitive RF plasma-enhanced chemical vapor deposition equipment, adjust the distance between the upper and lower plates of the capacitor plate to 2.5 cm, and ground the lower plate of the capacitor plate.

[0038] b) SiH 4 and CH 4 The gas is passed into the reaction chamber, SiH 4 and CH 4 The gas flow ratio is 3.5sccm:5sccm.

[0039] c) Ammonia gas (both with a purity of 99.9999%) is passed into the reaction chamber, and the flow rate of the ammonia gas is adjusted to 1.5 sccm, and the air inlet of the reaction chamber is adjusted to keep the pressure of the reaction chamber at 20 Pa.

[0040] d) Apply a radio frequency signal with a radio frequency power of 30W and a radio frequency of 40.68MHz to the upper plate, control the growth time for 30 minutes, and the growth temperature at 250°C.

[0041] e) Utilize xenon lamp 350nm ultraviolet light to irradiate the thin film prepared in step d), the relationship between its photo-induced red light emi...

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Abstract

The invention discloses a method for improving the red light emission efficiency of an amorphous silicon carbide film, and belongs to the technical field of nanometer optoelectronic device materials. The method comprises the following steps of fixing a substrate to the upper surface of a lower polar plate of a capacitance polar plate in a parallel plate capacitive radio-frequency plasma enhanced chemical vapor deposition system, and meanwhile heating the substrate; introducing a mixed gas of silane and methane into a reaction cavity; setting a flow ratio of the silane to the methane in the mixed gas according to a preparation process for the amorphous silicon carbide film, introducing micro-flow ammonia gas on this basis, and meanwhile adjusting an extraction opening of a reaction chamber so that the air pressure of the reaction chamber is kept at 20Pa; and adding a radio frequency signal to the upper polar plate of the capacitance polar plate, and controlling the growth time. According to the method, the red light emission efficiency of the amorphous silicon carbide film can be improved by 4 times and above, and the nitrogen-doped silicon-rich amorphous silicon carbide film with strong red light emission and prepared by the method can be compatible with the current microelectronic process and is easy to use.

Description

technical field [0001] The invention relates to the technical field of luminescent materials, in particular to a method for improving the red luminous efficiency of an amorphous silicon carbide thin film by using N doping. Background technique [0002] The optoelectronic integration based on semiconductor silicon-based materials is the core of the new generation of semiconductor devices in the 21st century, and the silicon-based light source is the key to realize Si monolithic optoelectronic integration. High-efficiency silicon-based light source is a major research topic in the field of material science and microelectronics, and has important basic and applied research significance. [0003] Amorphous silicon carbide (a-SiC x ) thin film is a wide bandgap semiconductor material with superior physical and chemical properties, such as high doping efficiency, transparency in the visible light region, etc., and has broad application prospects in the fields of silicon-based opt...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/32C23C16/509H01L31/20C09K11/65
CPCC23C16/325C23C16/5096C09K11/65H01L31/204Y02P70/50
Inventor 陈晓旋梁颖欣王硕肖扬刘倩倩陈光旭
Owner HANSHAN NORMAL UNIV
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