Preparation method of tungsten ditelluride nanobelt

Abstract

The invention discloses a preparation method of a tungsten ditelluride nanobelt. The method comprises the following steps: firstly, placing a polished surface of a substrate on a graphite sheet upwards, then covering a silicon wafer with a tungsten foil subjected to oxidation treatment, and placing a gasket between the substrate and the tungsten foil so as to form a micro-reaction cavity of a sandwich-like structure. On the basis of adopting a space confinement strategy, a reaction precursor is designed at the same time, and the tungsten foil subjected to oxidation treatment is used for providing a tungsten source, so that controllable preparation of the tungsten ditelluride nanobelt is realized. By controlling the oxidation time of the tungsten foil at high temperature, the size and morphology of the tungsten ditelluride nanobelt are effectively regulated and controlled. Meanwhile, controllable growth of the tungsten ditelluride nanobelt on different substrates such as sapphire, mica and glass is realized. According to the method, controllable preparation of the large-area WTe2 nanobelt can be realized, and a new synthesis path is provided for industrial application of the WTe2 nanobelt.

Description

technical field [0001] The invention relates to a preparation method of tungsten ditelluride, in particular to a preparation method of a tungsten ditelluride nanobelt. Background technique [0002] Since the discovery of graphene materials, due to its unique physical properties, it has attracted extensive attention from researchers. A large number of studies have shown that graphene has excellent properties such as high mobility, high thermal conductivity, high strength, and high light transmittance, making it show broad application prospects in the fields of electronics, optical devices, and sensors. However, graphene is a semimetal with zero band gap, and the current switching ratio of the field effect crystal based on it is extremely low (~10), which greatly hinders its application in the semiconductor field. Therefore, researchers have been committed to exploring new graphene-like materials with semiconductor properties, such as hexagonal boron nitride, transition metal...

AI Technical Summary

Problems solved by technology

Although the gas-phase transport method does produce high-quality bulk crystals, the process requires prolonged annealing at high temperatures of up to 1000°C, which is time-consuming and labor-intensive

Chinese invention CN109809372A provides a method for preparing a single-layer tungsten diselenide nanoribbon, which can be prepared by atmospheric pressure chemical vapor deposition. The introduction of more impurities leads to poor product quality and reduces the performance of the device, and the small amount of product obtained on the substrate cannot achieve large-scale production

Images