Etching composition

A composition and etching technology, applied in the field of etching compositions, can solve problems such as increased defective rate, fast etching speed, change in characteristics of etching solution, etc., and achieve the effects of simplifying process, reducing the amount of etching solution, and improving storage stability

Inactive Publication Date: 2018-05-11
ENF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are following problems in the conventionally known etching solution as above: the etching rate for copper film and other metal films is too fast, or the taper angle of the metal pattern after etching exceeds about 90°, that is, it has an inverted tapered shape.
In addition, when the concentration of copper ions increases, the copper ions react with hydrogen peroxide to form free radicals, and the formed free radicals decompose organic substances contained in the composition, changing the characteristics of the etching solution, resulting in defective issues such as increased

Method used

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Examples

Experimental program
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Effect test

Embodiment 1 to 7 and comparative example 1 to 11

[0086] Each component was mixed according to the component content described in the following Table 1, and the etching composition of Examples 1-7 and Comparative Examples 1-11 according to this invention was manufactured.

[0087] (Table 1)

[0088]

[0089] In order to evaluate the effect of the etching composition manufactured by the above method, on TFT-LCD GLS with Evaporate molybdenum film as a barrier metal, on which After evaporating the copper film to a thickness of 100 mm, a photolithography process is performed to form a pattern to manufacture a test piece. In order to confirm the etching characteristics (CD skew, taper) of each etching composition, each test piece was subjected to overetching (OE ), in order to observe the characteristics of the number of etching sheets, a scanning electron microscope (manufactured by Hitachi, SU8010) was used to observe the test pieces after the cumulative dissolution of copper powder to 300pm, 5000ppm, 6000ppm, and 7000ppm...

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Abstract

The invention provides an etching composition used in an etching process of a transition metal film such as an electrode of a TFT-LCD display. According to the etching composition disclosed by the invention, the metal ions generated when a transition metal film is etched can be effectively chelated, and the processing tension of the metal ions can be stably maintained for a long time, and the self-decomposition reaction of the composition can be effectively inhibited, so that the composition shows an excellent stability in which the etching process tension is not reduced, even when the etchingcomposition is used or stored for a long time.

Description

technical field [0001] The present invention relates to an etching composition, and more specifically, to an etching composition used for etching a transition metal film used as an electrode of a TFT-LCD display or the like. Background technique [0002] Generally, a thin film transistor display panel (Thin Film Transistor, TFT) is used as a circuit substrate for independently driving each pixel in a liquid crystal display device or an organic EL (Electro Luminescence, electroluminescence) display device. Scanning signal lines for transmitting scan signals, or pixel signal lines or data lines for transmitting gate lines and pixel signals are formed in the TFT, including thin film transistors connected to gate lines and data lines, and thin film transistors connected to pixel electrodes, etc. The process of forming the wiring of such a TFT generally includes: a sputtering process for forming a metal film; a process for forming a photoresist of a desired pattern by photoresis...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/18C23F1/26
CPCC23F1/18C23F1/26
Inventor 李宝研朴锺模李熙雄安镐源金世训
Owner ENF TECH
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