Corrosion protection method for plasma processing device and gas channel

Abstract

The invention relates to a plasma processing device and an anti-corrosion protection method for a gas channel. According to the invention, the inner side of the gas channel used for introducing a reaction gas into a reaction chamber is provided with a liner bushing, and the reaction gas is enabled to be transported in the liner bushing; the liner bushing is made of a material capable of preventingthe corrosion of the reaction gas; and the liner bushing is contacted with the inner wall of the gas channel or a gap is reserved between the liner bushing and the inner wall of the gas channel, or the liner bushing is contacted with the inner wall of a surface treatment protection layer formed on the inner wall of the gas channel or a gap is reserved between the liner bushing and the inner wallof the surface treatment protection layer, so that double protection is achieved. An O-shaped slot can also be arranged around a reaction gas outlet end and / or inlet end on the liner bushing. According to the invention, problems brought about by the inconsistency of thermal expansion coefficients of the surface treatment protection layer of a reaction chamber cover and the substrate material are solved, and corrosion impacts imposed on the chamber cover by a phenomenon of thermal micro-cracking of the surface treatment protection layer are avoided; and the setting of the liner bushing avoids the process result drifting caused by constant consumption of the corrosive gas.

Description

technical field [0001] The invention relates to the anti-corrosion protection technology of etching equipment, in particular to a plasma processing device and a method for anti-corrosion protection of gas passages. Background technique [0002] The plasma processing device generally introduces a reaction gas into the reaction chamber to generate plasma, which is used to perform etching and other treatments on the semiconductor substrate on the bottom base in the reaction chamber. [0003] Such as figure 1 As shown, in the existing inductively coupled plasma processing device (hereinafter referred to as the ICP device), an annular chamber cover 20 is provided on the side wall of the chamber body 10 of the reaction chamber, and a dielectric is provided on the chamber cover 20. Window 30; the first passage 41 of the gas passage 40 communicates with the gas pipeline outside the chamber cover 20, and also communicates with the second passage 42 arranged horizontally inside the c...

AI Technical Summary

Problems solved by technology

In this case, the corrosive gas can pass through the microcracks of the anodized layer to contact the base aluminum, which will locally corrode the base aluminum, causing metal pollution inside the chamber 10, and the consumption of the corrosive reaction gas will also cause etching results. the constant drift

Once the gas channel 40 is severely corroded, it is necessary to directly replace the new chamber cover 20, which is costly

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