Transistors and methods of forming them

Abstract

The invention relates to a transistor and a formation method thereof. The formation method comprises the steps of providing a substrate, wherein the substrate comprises a core region and a peripheralregion; setting a plurality of isolation structures in the substrate; forming a gate dielectric layer covering the substrate and the isolation structures; forming a first barrier layer covering the gate dielectric layer in the core region; respectively forming a first pseudo gate electrode layer and a second pseudo gate electrode layer on the first barrier layer and the gate dielectric layer in the peripheral region; forming an interlayer dielectric layer on the substrate between the first pseudo data electrode layer and the second pseudo gate electrode layer; removing the first pseudo gate electrode layer and the second pseudo gate electrode layer, and forming a first opening exposing the first barrier layer and a second opening exposing the gate dielectric layer in the interlayer dielectric layer; removing the first barrier layer and the gate dielectric layer at the bottom of the first opening; and forming a metal layer in the first opening and the second opening. The formation method provided by the invention of the transistor improves the electrical performance of the transistor.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a transistor and a forming method thereof. Background technique [0002] In semiconductor manufacturing, with the development of VLSI, the feature size of integrated circuits continues to decrease. In order to adapt to the reduction of feature size, the channel length of MOSFET devices is also continuously shortened. However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, so the control ability of the gate to the channel becomes worse, and the gate voltage pinches off the channel. The difficulty is also increasing, making the phenomenon of subthreshold leakage (subthreshold leakage), the so-called short-channel effect (SCE: short-channel effects) more likely to occur. [0003] Therefore, in order to better adapt to the reduction of feature size, the semiconductor process has gradually begun to transi...

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Problems solved by technology

[0005] However, the electrical performance of transistors formed by existing technologies still needs to be improved

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