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Sputtering target for forming magnetic thin film

A technology of sputtering targets and oxides, which is applied in the direction of sputtering coating, magnetic layer coating, sputtering coating coating, etc., to achieve the effects of suppressing the generation of powder particles, improving production efficiency, and reducing defective rates

Active Publication Date: 2018-05-11
JX NIPPON MINING & METALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, although boron oxide is also contained, as in the above-mentioned documents 1, 2, and 3, there is nothing about the problem of the presence of boron oxide in the sintered body or the target containing the sintered body, or the solution to the problem. record

Method used

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  • Sputtering target for forming magnetic thin film
  • Sputtering target for forming magnetic thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Prepare Co powder, Cr powder, Pt powder as metal powder, prepare Co 3 TiB 2 o 8 Powder, SiO 2 Powder, CoO powder as non-magnetic material powder. About Co 3 TiB 2 o 8 Powder, use pre-mixed CoO powder, TiO 2 Powder and B 2 o 3 Powder obtained by mixing, synthesizing, and pulverizing. Then, 2000 g of these powders were weighed in the following composition ratio.

[0043] Composition (atomic%): Co-1.17Cr-11.72Pt-3.13B-1.56Ti-3.13Si-20.31O

[0044] Next, the weighed powder was enclosed in a ball mill jar with a capacity of 10 liters together with grinding medium tungsten alloy balls, and it was rotated for 120 hours and mixed. The mixed powder thus obtained was filled into a carbon mold, and hot-pressed in a vacuum atmosphere at a temperature of 980° C., a holding time of 2 hours, and a pressing pressure of 30 MPa to obtain a sintered body. Then, this sintered body was cut with a lathe to obtain a disk-shaped sputtering target with a diameter of 164 mm and a thi...

Embodiment 2

[0049] Prepare Co powder, Pt powder as metal powder, prepare CrBO 3 Powder, TiBO 3 Powder, TiO 2 Powder, Co 3 o 4 Powder as non-magnetic material powder. About CrBO 3 powder, using pre-mixed Cr 2 o 3 powder, B 2 o 3 Powder obtained by powder mixing, synthesis, and pulverization, about TiBO 3 powder, use Ti 2 o 3 Powder and B 2 o 3 Powder obtained by mixing, synthesizing, and pulverizing. Then, 2000 g of these powders were weighed in the following composition ratio. Then, the weighed powders were mixed by the same method as in Example 1, followed by hot pressing, and the thus obtained sintered body was cut to obtain a sputtering target.

[0050] Composition (atomic%): Co-1.19Cr-11.90Pt-3.17B-2.38Ti-15.87O

[0051] Next, quantitative analysis of boron was carried out on the collected pulverized powder of this sputtering target by the same method as in Example 1. As a result, boron oxide (B 2 o 3 ) in the leaching amount of metal boron in water is 40 μg. The sp...

Embodiment 3

[0053] Prepare Co powder, Cr powder, Pt powder as metal powder, prepare CrBO 3 Powder, Mn 3 B 2 o 6 powder, CoO powder, SiO 2 Powder as non-magnetic material powder. About Mn 3 B 2 o 6 powder, using pre-mixed MnO powder, B 2 o 3 Powder obtained by mixing, synthesizing, and pulverizing. Then, 2000 g of these powders were weighed in the following composition ratio. Then, the weighed powders were mixed by the same method as in Example 1, followed by hot pressing, and the thus obtained sintered body was cut to obtain a sputtering target.

[0054]Composition (atomic%): Co-3.2Cr-12.4Pt-3.20B-2.40Mn-1.60Si-18.40O

[0055] Next, quantitative analysis of boron was carried out on the collected pulverized powder of this sputtering target by the same method as in Example 1. As a result, boron oxide (B 2 o 3 ) The leaching amount of metal boron in water is 180 μg. The specific surface area of ​​the pulverized powder is 0.15m 2 / g, therefore, the boron oxide (B 2 o 3 ) leac...

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Abstract

The invention relates to a sputtering target comprising a Co-containing alloy and boron and / or an oxide of boron, the sputtering target being characterized in that the metal boron in boron oxide (B2O3) that dissolves into water is 7000 [mu]g / m2 or less. The invention addresses the problem of providing a sputtering target suitable for forming magnetic recording films, the sputtering target being capable of limiting the generation of particles resulting from the elution of B2O3 during sputtering.

Description

technical field [0001] The present invention relates to a magnetic material sputtering target used for forming a magnetic thin film of a magnetic recording medium, particularly a granular film in a magnetic recording medium of a hard disk using a perpendicular magnetic recording method, and relates to a magnetic material sputtering target capable of suppressing the formation of powder during sputtering. It is a non-magnetic material particle-dispersed magnetic material sputtering target with Co or Fe as the main component. Background technique [0002] In the recording layer of a hard disk employing a perpendicular magnetic recording method, a material having Co or Fe as a base material, which is a ferromagnetic metal, is used. Among them, composite materials including Co-Cr base, Co-Pt, Co-Cr-Pt base and Fe-Pt base alloys with ferromagnetic metals as main components and non-magnetic inorganic materials are often used. Furthermore, such a magnetic thin film of a magnetic re...

Claims

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Application Information

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IPC IPC(8): C23C14/34C22C19/07C22C32/00G11B5/851B22F1/00B22F1/12
CPCC23C14/34C22C19/07C22C32/00G11B5/851B22F1/12
Inventor 森下雄斗
Owner JX NIPPON MINING & METALS CO LTD