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High-current pulse test method

A technology of pulse testing and high current, which is applied in the direction of electronic circuit testing, single semiconductor device testing, measuring electricity, etc., can solve the problem of no application documents, etc., achieve the effect of reducing failure rate, expanding application range, and solving application limitations

Inactive Publication Date: 2018-05-15
GUIZHOU ZHENHUA FENGGUANG SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These patented technologies still cannot solve the problem of applying the original test method to the integrated circuit test, and there is no corresponding application document at present

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Example 1: FX2110 driver output short-circuit current test, as shown in Figure 4

[0017] The output current of the FX2110 driver is 2A. According to the test conditions in the FX2110 data sheet, the power supply voltage is 15V, which can be provided by multiple voltage and current sources, and can provide a constant 15V DC voltage with an accuracy of 0.1mV. The device is a dual-channel driver. After completing the test of FX2110, it can meet the test of the output short-circuit current of most such devices.

[0018] According to the delay time of the device is about 150ns, the pulse time is still set to 500us, the duty cycle is 2%, the signal input terminal will input the pulse signal continuously, when the output terminal is detected to be normal, the switch is closed, and the output current is tested. After the short-circuit current is output, the switch is turned off to complete the electrical test. The testing of this project has been approved by the third party. ...

Embodiment 2

[0019] Example 2: FH541 power operational amplifier output current test, such as Figure 5

[0020] The output peak current of the power operational amplifier is relatively large, and the device heats up quickly. With the conventional test method, the device will be overloaded for more than 10 seconds, resulting in severe heat generation and burnout of the device, and a high final failure rate. The improved high-current pulse test method can completely solve this problem. From Figure 5 It can be seen that the output end is directly connected to the other end of the power supply, and a virtual ground can be provided through programming. During the test, the device can be completely avoided from heating, and the output short-circuit current of the device can be accurately measured. After referring to the data sheet, the continuous pulse provided by the input terminal has a duty cycle of 2% and a pulse time of 500us. When the output is detected to be normal, the switch is turn...

Embodiment 3

[0021] Embodiment 3 FX9024 P-channel power MOSFET drain current test, such as Figure 6

[0022] FX9024 is a semiconductor discrete device. The original test method can also test the drain current, but the developed test board and test program are specific and can only test this product. The improved test method can cover all PMOS drain current tests, and has wider practicability. The MOS tube is a three-terminal device, the source is grounded, the drain is connected to the negative power supply, and the gate is connected to the pulse signal. Duty ratio, 500uS pulse time is enough for the device to start working and complete the drain current test. The drain current of this type of device is not a short-circuit current, but the output current when the device is turned on, and there is no risk of burning the device. Figure 6 It is the test schematic diagram of FX9024. It can be seen from the figure that the test principle is relatively simple. The designed test board and te...

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Abstract

The invention relates to an improved high-current pulse test method. The method is improved on the basis of a high-current pulse test method and is transplanted to an STS8208 mixed-signal test systemso as to perform testing; test conditions, namely pulse time and a duty ratio are set to certain numerical values, so that the method can cover the testing of the output current of the power devices of existing integrated circuits; a specified voltage is applied to the power source end of a test device, a set pulse excitation source is provided at the input end of the device, and a dual-circuit power voltage and current source is adopted to provide virtual ground for a load; and similarly, a specified voltage is also applied to the power source end of a test device, a set pulse excitation source is provided at the input end of the device, and a dual-circuit power voltage and current source is adopted to provide virtual ground for a load. According to the method of the invention, a test situation that only discrete devices can be tested is expanded to a situation that the power devices of integrated circuits can be tested, and therefore, an application range is extended, and at the sametime, the problem of high possibility of the burnout of the power devices can be solved. The method of the invention is suitable for testing the power devices of an integrated circuit, drivers and other devices which output high current.

Description

technical field [0001] The present invention relates to the test of electric current, specifically, relates to the test method of large current pulse. technical background [0002] The high-current pulse test method is a discrete device test method proposed to avoid measurement errors caused by device heating during measurement. The original test method stipulates that the pulse time is not greater than 10ms, and the duty cycle is at most 2%. Within this range , the pulse must be long enough to accommodate the capabilities of the test equipment and the required accuracy, and short enough to avoid heating. The proposal of this test method solves the test problem of high current output of semiconductor discrete devices. [0003] However, the original test method is only applicable to semiconductor discrete devices, and its use has limitations; the pulse time and duty cycle are empirical parameters, and there are no specific indicators. On the one hand, the output current of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26G01R31/28
CPCG01R31/2601G01R31/2851
Inventor 夏自金胡锐刘健黄丽芳马力袁兴林李平包磊张小六申林代松井文涛刘永鹏李政高鹏蒋冰桃
Owner GUIZHOU ZHENHUA FENGGUANG SEMICON
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