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Methods to increase parasitic light sensitivity

A technology of light sensitivity and MOS tube, which is applied in the field of image processing, can solve problems such as degradation, and achieve the effect of improving parasitic light sensitivity

Active Publication Date: 2019-11-15
思特威(上海)电子科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the leakage phenomenon in each node of the circuit, it may lead to a decrease in parasitic light sensitivity (Parasitic Light Sensitivity, PLS), which is the biggest disadvantage of the voltage domain 8T global shutter pixel.

Method used

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  • Methods to increase parasitic light sensitivity
  • Methods to increase parasitic light sensitivity
  • Methods to increase parasitic light sensitivity

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] Such as image 3 As shown, one end of the first capacitor C1 is connected to the switching unit in the first MOS transistor switch S1 / second MOS transistor switch S2 through the first active area A, and one end of the second capacitor C2 is connected to the switching unit through the second active area B. The switching units in the second MOS transistor switch S2 are connected.

[0060] Among them, such as image 3 As shown, the first active region A includes part of the active region of the first MOS transistor switch S1 and part of the active region of the second MOS transistor switch S2; the second active region B is part of the second MOS transistor switch S2. source area.

[0061] After the first active region A and the second active region B of the MOS transistor switch are selected, the switch unit ( image 3 The S1 area shown, the S2 area) is adjusted and matched, mainly to adjust the channel in the switch unit to compensate and adjust the leakage current of ...

Embodiment 2

[0071] The leakage of the first capacitor C1 / second capacitor C2 node is not only from the channel leakage of the MOS transistor switch, but also from the PN junction leakage and surface leakage of the active region of the MOS transistor switch. Based on this, this embodiment can adjust the matching and The active region structure connected with the capacitor compensates and adjusts the leakage current of the capacitor.

[0072] Optionally, the first active region A and the second active region B are matched to compensate and adjust the leakage current I of the first capacitor C1 sigleak or the leakage current I of the second capacitor C2 rstleak , making Csig*I rstleak =Crst*I sigleak The steps include:

[0073] S2a, providing a MOS tube switch as a test structure;

[0074] S2b. Measuring the relationship between the active region and the leakage current in the test structure;

[0075] S2c. Adjust the first active region A according to the relationship between the active...

Embodiment 3

[0079] Embodiment 1 and Embodiment 2 only change the structure of the MOS tube switch by simply changing the physical size / shape. To adjust the leakage of the MOS tube switch, technological means can also be adopted. For example, ion implantation can be used to change the MOS tube switch. Physical and electrical properties, thereby improving its leakage.

[0080] Based on this, in this embodiment, ion implantation can be performed on the first MOS transistor switch unit S1 / first active region A / second MOS transistor switch unit S2 / second active region B, so that Csig*I rstleak =Crst*I sigleak .

[0081] Optionally, perform ion implantation such that Csig*I rstleak =Crst*I sigleak The steps include:

[0082] S2I, provide MOS tube switch as a test structure;

[0083] S2II. Determining the relationship between the ion implantation of the MOS transistor switch unit / the ion implantation of the active region and the leakage current in the test structure;

[0084] S2III. Accordin...

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PUM

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Abstract

The invention discloses a method for improving parasitic light sensitivity, which is used for improving the parasitic light sensitivity of a voltage domain 8T global shutter pixel structure, comprising the steps of: providing a voltage domain 8T global shutter pixel structure, including sequentially connected photosensitive diodes, correlated double sampling The reading circuit, the related double sampling and holding circuit and the related double sampling output circuit, the related double sampling and holding circuit includes the first MOS tube switch, the second MOS tube switch, the first capacitor and the second capacitor; by adjusting the related double sampling and holding circuit The structure of the MOS tube switch, the leakage current I of the first capacitor sigleak or the leakage current of the second capacitor I rstleak Make compensation adjustments so that Csig*I rstleak =Crst*I sigleak . The present invention compensates and adjusts the leakage current of the storage capacitor by adjusting the physical shape or size of the channel / active region of the MOS transistor switch, or adjusting the physical and electrical properties of the channel / active region of the MOS transistor switch by means of ion implantation, It can effectively eliminate the influence of capacitor leakage on the relevant double-sampling output voltage, and improve the sensitivity of parasitic light.

Description

technical field [0001] The invention relates to the technical field of image processing, in particular to a method for improving parasitic light sensitivity. Background technique [0002] The image sensor is an important part of a digital camera. According to the different components, it can be divided into two categories: CCD (Charge Coupled Device, charge-coupled device) and CMOS (Complementary Metal-Oxide Semiconductor, metal oxide semiconductor device). [0003] CMOS technology is a technology that many image sensor semiconductor research and development companies in the world are trying to replace CCD. After years of hard work, as an image sensor, CMOS has overcome many early shortcomings and has developed to a level that can compete with CCD technology in terms of image quality. According to the differences in exposure methods, CMOS image sensors can be classified into rolling shutter CMOS image sensors and global shutter CMOS image sensors. [0004] The traditional...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04N17/00H04N5/378H04N5/361
CPCH04N17/002H04N25/63H04N25/75H04N25/616H04N25/771
Inventor 石文杰陈超林邵泽旭任冠京刘芃宇
Owner 思特威(上海)电子科技股份有限公司
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