Transient voltage suppressor and fabrication method thereof

A technology of transient voltage suppression and manufacturing method, which is applied in the direction of electrical solid-state devices, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of increasing device area and manufacturing cost, and achieve reduced manufacturing cost, small device area, The effect of low process difficulty

Inactive Publication Date: 2018-05-18
NANJING LISHUI HIGH-TECH VENTURE CAPITAL MANAGEMENT CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the currently commonly used trench TVS can only achieve unidirectional protection. If bidirectional protection is

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  • Transient voltage suppressor and fabrication method thereof
  • Transient voltage suppressor and fabrication method thereof
  • Transient voltage suppressor and fabrication method thereof

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Embodiment Construction

[0029] The following will clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0030] In order to solve the technical problems of the prior art transient voltage suppressors such as large area, high process difficulty and high device manufacturing cost, the present invention provides an improved transient voltage suppressor 100, please refer to figure 1 , figure 1 is a schematic structural diagram of the transient voltage suppressor 100 of the present invention. The transient voltage suppressor 100 includes a P-type substrate 101, an N-type epitaxial layer 102 formed on the P-type substrate 10...

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Abstract

The invention provides a transient voltage suppressor and a fabrication method thereof. The transient voltage suppressor comprises a P-type substrate, an N-type epitaxial layer, a first groove, a second groove, a first P-type diffusion region, a second P-type diffusion region, P-type epitaxial layers, an N-type injection region and a P-type injection region, wherein the N-type epitaxial layer is formed on the P-type substrate, the first groove and the second groove are formed in a surface of the N-type epitaxial layer, the first P-type diffusion region is formed on a surface of the first groove, the second P-type diffusion region is formed on a surface of the second groove, the P-type epitaxial layers are formed in the first groove and the second groove and on the N-type epitaxial layer, the N-type injection region penetrates through the P-type epitaxial layer and extends to the N-type epitaxial layer between the first groove and the second groove, and the P-type injection region is formed on a surface of the N-type injection region.

Description

【Technical field】 [0001] The invention relates to the technical field of semiconductor chip manufacturing, in particular to a transient voltage suppressor and a manufacturing method thereof. 【Background technique】 [0002] Transient Voltage Suppressor (TVS) is a solid-state semiconductor device specially designed to protect sensitive semiconductor devices from transient voltage surge damage. It has small clamping coefficient, small size, fast response, and leakage Due to the advantages of small current and high reliability, it has been widely used in voltage transient and surge protection. Low-capacitance TVS is suitable for protection devices of high-frequency circuits, because it can reduce the interference of parasitic capacitance on the circuit and reduce the attenuation of high-frequency circuit signals. [0003] Electrostatic discharge (ESD), along with other random voltage transients in the form of voltage surges, are commonly found in a variety of electronic devices...

Claims

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Application Information

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IPC IPC(8): H01L27/02H01L21/82
CPCH01L21/82H01L27/0255H01L27/0296
Inventor 不公告发明人
Owner NANJING LISHUI HIGH-TECH VENTURE CAPITAL MANAGEMENT CO LTD
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