Transient voltage suppressor and manufacturing method thereof

A technology for transient voltage suppression and manufacturing methods, which is applied in the fields of electrical solid-state devices, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of increasing device area and manufacturing cost, and achieve small device area, low process difficulty, and protection Effects of improved characteristics and reliability

Inactive Publication Date: 2018-05-22
SHENZHEN JINGTE INTELLIGENT MFG TECH CO LTD
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  • Abstract
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  • Claims
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Problems solved by technology

[0004] Currently commonly used transient voltage suppressors (such as trench transient voltage suppressors) generally can only achieve unidirectional protection. If bidirectional protection is required, multiple transient voltage suppressors must be connected in series or in parallel, but this will increase Large device area and manufacturing cost

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  • Transient voltage suppressor and manufacturing method thereof
  • Transient voltage suppressor and manufacturing method thereof
  • Transient voltage suppressor and manufacturing method thereof

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Embodiment Construction

[0036] The following will clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0037] see figure 1 , figure 1 is a schematic structural diagram of the transient voltage suppressor 100 of the present invention. The transient voltage suppressor 100 includes an N-type substrate, a first layer of P-type epitaxy on the N-type substrate, a first N-type implantation region and a second layer of P-type epitaxy on the surface of the first layer of P-type epitaxy. The N-type implant region, the second layer P-type epitaxy located on the first layer P-type epitaxy and the first and second N-type implant...

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Abstract

The invention provides a transient voltage suppressor which includes an N-type substrate, a first layer of P-type epitaxy on the N-type substrate, a first N-type injection region and a second N-type injection region on the surface of the first layer of P-type epitaxy, a second layer of P-type epitaxy on the first layer of P-type epitaxy and the first and second N-type injection regions, a third N-type injection region formed on the surface of the second layer of P-type epitaxy, a dielectric material formed on the second layer of P-type epitaxy, a first trench which passes through the dielectric material and the second layer of P-type epitaxy and extends to the first N-type injection region, a second trench which passes through the dielectric material and the second layer of P-type epitaxyand extends to the second N-type injection region, a through hole which passes through the dielectric material is corresponding to the third N-type injection region, silicon oxide formed on a first trench sidewall and a second trench sidewall, and polysilicon on the surfaces of the silicon oxide of the first trench and the silicon oxide of the second trench.

Description

【Technical field】 [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a transient voltage suppressor and a manufacturing method thereof. 【Background technique】 [0002] Transient Voltage Suppressor (TVS) is a solid-state semiconductor device specially designed to protect sensitive semiconductor devices from transient voltage surge damage. It has small clamping coefficient, small size, fast response, and leakage Due to the advantages of small current and high reliability, it has been widely used in voltage transient and surge protection. The low-capacitance transient voltage suppressor is suitable for the protection of high-frequency circuits, because it can reduce the interference of parasitic capacitance to the circuit and reduce the attenuation of high-frequency circuit signals. [0003] Electrostatic discharge (ESD), along with other random voltage transients in the form of voltage surges, are commonly found in a va...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L21/82
CPCH01L27/0255H01L21/82H01L27/0296
Inventor 不公告发明人
Owner SHENZHEN JINGTE INTELLIGENT MFG TECH CO LTD
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