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Solar cell and method for manufacturing the same

A technology for solar cells and electrodes, applied in final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve problems such as poor passivation properties, complex doping processes, and deterioration of semiconductor substrate interface properties, to enhance productivity, improve Efficiency and reliability, effect of preventing deterioration

Inactive Publication Date: 2018-05-25
LG ELECTRONICS INC
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Problems solved by technology

[0004] For example, in a conventional solar cell manufactured by doping a semiconductor substrate with a dopant, the doping process etc. are very complicated, and the interface properties of the semiconductor substrate deteriorate, resulting in poor passivation properties
In another solar cell manufactured without performing a doping process of a semiconductor substrate with a dopant in order to prevent this problem, the properties and efficiency of the solar cell can be greatly improved depending on the properties of layers included in the solar cell change, the reliability of solar cells is not high

Method used

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  • Solar cell and method for manufacturing the same
  • Solar cell and method for manufacturing the same
  • Solar cell and method for manufacturing the same

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Embodiment approach 1

[0140] A first tunneling layer and a second tunneling layer formed of amorphous silicon are formed on a front surface and a rear surface of an n-type single crystal silicon substrate. A first intermediate layer formed of a silicon oxide layer having hydroxyl groups is formed on the first tunneling layer, and a second intermediate layer formed of a silicon oxide layer having hydroxyl groups is formed on the second tunneling layer. A first conductive region formed of a molybdenum oxide layer and a second conductive region formed of a titanium oxide layer are formed. The first intermediate layer and the second intermediate layer were formed through an atomic layer deposition process and had a thickness of 0.5 mm. The first conductive region is formed by an atomic layer deposition process at a process temperature of 200° C. and has a thickness of 10 nm, and the second conductive region is formed by an atomic layer deposition process at a process temperature of 200° C. and has a th...

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Abstract

A solar cell and a method for manufacturing the same. Disclosed is a solar cell including: a semiconductor substrate; a tunneling layer on a surface of the semiconductor substrate; an intermediate layer on the tunneling layer, wherein the intermediate layer including a hydroxyl group (an OH group); a first conductive region on the intermediate layer, wherein the first conductive region comprisinga metal oxide layer for extracting a first carrier; and a first electrode electrically connected to the first conductive region.

Description

technical field [0001] Embodiments of the present invention relate to a solar cell and a method of manufacturing the same, and more particularly, to a solar cell including a metal oxide and a method of manufacturing the same. Background technique [0002] Recently, as existing energy sources such as oil and coal are expected to be exhausted, interest in alternative energy sources to replace them is increasing. Among them, solar cells are attracting attention as next-generation batteries that convert solar energy into electrical energy. [0003] Such a solar cell can be manufactured by forming various layers and various electrodes according to a desired design. In connection with this, the efficiency of solar cells can be determined according to the design of various layers and electrodes. For the commercial availability of such solar cells, it is necessary to overcome the problems associated with the low efficiency of solar cells. Therefore, various layers and various ele...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/0216H01L31/068H01L31/18
CPCH01L31/02167H01L31/022425H01L31/068H01L31/1804H01L31/022441H01L31/02363H01L31/072H01L31/074H01L31/1868H01L31/1884Y02E10/547Y02P70/50H01L31/02366H01L31/0392H01L31/1864Y02E10/50H01L31/02168H01L31/022466
Inventor 李有真权泰寅池光善李洪哲
Owner LG ELECTRONICS INC
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