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Preparation method and application of potassium-doped carbon nitride photocatalyst

A carbon nitride photocatalyst technology, applied in the field of catalysis, can solve the problems of limiting carbon nitride photocatalytic activity, short life of photogenerated carriers, high recombination rate, etc., to improve photocatalytic activity, increase specific surface area, and increase activity site effect

Inactive Publication Date: 2018-05-29
INT ACAD OF OPTOELECTRONICS AT ZHAOQING SOUTH CHINA NORMAL UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the short lifetime of photogenerated carriers and high recombination rate, the photocatalytic activity of carbon nitride is limited, so it is necessary to modify carbon nitride to further improve the reactivity.

Method used

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  • Preparation method and application of potassium-doped carbon nitride photocatalyst

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Mix 2g of ammonium chloride and 10g of dicyandiamide, then add 0.05g of potassium nitrate, mix evenly, and then place it in a muffle furnace for calcination. , cooled naturally to room temperature to obtain the potassium-doped carbon nitride photocatalyst.

Embodiment 2

[0023] Take 5g of ammonium chloride, 10g of dicyandiamide, and 0.1g of potassium nitrate, mix them uniformly, place them in a muffle furnace for calcination, and heat up at a rate of 5°C / min. After rising to 600°C, keep the temperature for 4 hours, and then cool naturally to room temperature , to obtain the potassium-doped carbon nitride photocatalyst.

Embodiment 3

[0025] Take 5g of ammonium chloride, 10g of dicyandiamide, and 0.15g of potassium nitrate, mix them uniformly, place them in a muffle furnace for calcination, and heat up at a rate of 3°C / min. After rising to 550°C, keep warm for 5 hours, and then cool naturally to room temperature , to obtain the potassium-doped carbon nitride photocatalyst.

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Abstract

The invention discloses a preparation method and application of a potassium-doped carbon nitride photocatalyst. The method comprises steps as follows: ammonium chloride, dicyandiamide and potassium nitrate are mixed, and the mixture is heated to 500-600 DEG C and then kept at the constant temperature for 3-6 h; the mixture is naturally cooled to the room temperature after calcination ends, and thepotassium-doped carbon nitride photocatalyst can be obtained. The potassium-doped carbon nitride photocatalyst is used for photocatalytic decomposition of organic matter. The prepared photocatalyst has larger interlayer spacing and specific surface area and excellent photocatalytic activity, the degradation efficiency is two times or more that of pure carbon nitride in the degradation experimentof the organic matter, and the preparation method is simple and feasible, has lower requirements for experiment facilities and can save the preparation cost to the greatest extent.

Description

Technical field: [0001] The invention relates to a potassium-doped carbon nitride photocatalyst and its preparation method and application, belonging to the technical field of catalysis. Background technique: [0002] In recent years, with the development of urbanization and industrialization, the consumption of traditional fossil fuels has been increasing day by day, and the earth's energy storage has declined sharply. The problem of energy shortage has aroused widespread concern of human beings. In addition, environmental pollution caused by the burning of fossil fuels and other industrial wastes has become increasingly prominent, seriously affecting our daily lives and threatening the sustainable development of human society. Based on this, it is imminent to seek a kind of green environmental protection and renewable energy. As a clean energy with unlimited reserves, the development and utilization of solar energy has become a research hotspot for scientific researchers....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/24C02F1/30
CPCC02F1/30B01J27/24C02F2101/308C02F2305/10B01J35/39
Inventor 陈志鸿王新马歌吕海钦
Owner INT ACAD OF OPTOELECTRONICS AT ZHAOQING SOUTH CHINA NORMAL UNIV
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