Method for auxiliary growth of graphene by using composite metal on 6H/4H-SiC silicon surface

A composite metal and graphene technology, applied in the direction of graphene, nano-carbon, etc., can solve the problems of poor graphene uniformity, hinder the development of graphene, reduce the mobility of graphene, etc., and achieve the effect of good quality and good effect.

A composite metal and graphene technology, applied in the direction of graphene, nano-carbon, etc., can solve the problems of poor graphene uniformity, hinder the development of graphene, reduce the mobility of graphene, etc., and achieve the effect of good quality and good effect.

CN108101028APending Publication Date: 2018-06-01SHANDONG UNIV
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  • Method for auxiliary growth of graphene by using composite metal on 6H/4H-SiC silicon surface
  • Method for auxiliary growth of graphene by using composite metal on 6H/4H-SiC silicon surface
  • Method for auxiliary growth of graphene by using composite metal on 6H/4H-SiC silicon surface

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Embodiment Construction

[0019] Technical scheme of the present invention is as follows:

[0020] A kind of method utilizing compound metal to assist the growth graphene on 6H / 4H-SiC silicon face, comprises the steps:

[0021] (1) Polishing, cutting, and cleaning the silicon surface of the 6H / 4H-SiC wafer to obtain a 6H / 4H-SiC wafer with a thickness of 300-400 μm;

[0022] (2) Place the 6H / 4H-SiC wafer processed in step (1) in the CVD furnace chamber with the silicon side facing up, vacuumize and rapidly raise the temperature to 1000-1100°C, and keep it warm for 5-20 minutes;

[0023] (3) Introduce high-purity argon and high-purity hydrogen into the reaction chamber, control the pressure at 300-800mbar, then raise the temperature to 1450-1600°C, and perform hydrogen etching on the SiC substrate of the 6H / 4H-SiC wafer for 10- 60min, cool down to room temperature, and obtain SiC substrate after hydrogen etching;

[0024] (4) Deposit a layer of carbon-dissolving and carbon-evolving metal with a thickne...

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Abstract

The invention relates to a method for auxiliary growth of graphene by using a composite metal on a 6H / 4H-SiC silicon surface. The method comprises the following steps: high temperature heating is usedfor partial cracking of Si-C bonds on the surface of a SiC wafer, and a few nucleation sites which employ C atoms as centers are generated; the temperature is rapidly reduced to a growth temperatureof a CVD process; an external carbon source is introduced from a metal channel of a composite metal film and graphene continuously grows on the surface of SiC; under the assistance of the metal channel of the composite metal film, and graphene of large size and high quality is prepared by using synergism of the SiC internal carbon source and the external carbon source. The method can avoid damageon graphene in traditional CVD method transferring processes, weaken influences on a substrate buffer layer, and compared with single metal substrates, the method has better effects, and graphene withbetter quality is obtained.

Description

technical field [0001] The invention relates to a method for assisting the growth of graphene on a 6H / 4H-SiC silicon surface by using a composite metal, and belongs to the technical field of graphene preparation. Background technique [0002] Graphene is a new material with a two-dimensional honeycomb lattice structure. It has excellent electrical, thermal and mechanical properties and is expected to be widely used in high-performance nanoelectronic devices, composite materials, field emission materials, gas sensors and energy storage. It has broad application prospects in industry, power industry and electronics industry. [0003] Graphene is made of carbon atoms with sp 2 The atomic-level two-dimensional crystal material in the hexagonal honeycomb lattice formed by orbital hybridization has a high carrier mobility dozens of times higher than that of commercial silicon wafers, and is little affected by temperature and doping effects, showing Excellent electron transport p...

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Application Information

Patent Timeline
01 Jun 2018
Publication
CN108101028A
IPC
C01B32/184
Inventors
杨志远; 于法鹏