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Method for auxiliary growth of graphene by using composite metal on 6H/4H-SiC silicon surface

A composite metal and graphene technology, applied in the direction of graphene, nano-carbon, etc., can solve the problems of poor graphene uniformity, hinder the development of graphene, reduce the mobility of graphene, etc., and achieve the effect of good quality and good effect.

Pending Publication Date: 2018-06-01
SHANDONG UNIV
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Problems solved by technology

However, due to the limitations of the growth mechanism, the uniformity of graphene obtained by SiC pyrolysis is poor, and it is difficult to obtain graphene films with a controllable number of layers. The obvious buffer layer reduces the mobility of graphene, which is not conducive to the application of graphene electronic devices and hinders the development of graphene in the microelectronics industry

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  • Method for auxiliary growth of graphene by using composite metal on 6H/4H-SiC silicon surface
  • Method for auxiliary growth of graphene by using composite metal on 6H/4H-SiC silicon surface
  • Method for auxiliary growth of graphene by using composite metal on 6H/4H-SiC silicon surface

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Embodiment Construction

[0019] Technical scheme of the present invention is as follows:

[0020] A kind of method utilizing compound metal to assist the growth graphene on 6H / 4H-SiC silicon face, comprises the steps:

[0021] (1) Polishing, cutting, and cleaning the silicon surface of the 6H / 4H-SiC wafer to obtain a 6H / 4H-SiC wafer with a thickness of 300-400 μm;

[0022] (2) Place the 6H / 4H-SiC wafer processed in step (1) in the CVD furnace chamber with the silicon side facing up, vacuumize and rapidly raise the temperature to 1000-1100°C, and keep it warm for 5-20 minutes;

[0023] (3) Introduce high-purity argon and high-purity hydrogen into the reaction chamber, control the pressure at 300-800mbar, then raise the temperature to 1450-1600°C, and perform hydrogen etching on the SiC substrate of the 6H / 4H-SiC wafer for 10- 60min, cool down to room temperature, and obtain SiC substrate after hydrogen etching;

[0024] (4) Deposit a layer of carbon-dissolving and carbon-evolving metal with a thickne...

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Abstract

The invention relates to a method for auxiliary growth of graphene by using a composite metal on a 6H / 4H-SiC silicon surface. The method comprises the following steps: high temperature heating is usedfor partial cracking of Si-C bonds on the surface of a SiC wafer, and a few nucleation sites which employ C atoms as centers are generated; the temperature is rapidly reduced to a growth temperatureof a CVD process; an external carbon source is introduced from a metal channel of a composite metal film and graphene continuously grows on the surface of SiC; under the assistance of the metal channel of the composite metal film, and graphene of large size and high quality is prepared by using synergism of the SiC internal carbon source and the external carbon source. The method can avoid damageon graphene in traditional CVD method transferring processes, weaken influences on a substrate buffer layer, and compared with single metal substrates, the method has better effects, and graphene withbetter quality is obtained.

Description

technical field [0001] The invention relates to a method for assisting the growth of graphene on a 6H / 4H-SiC silicon surface by using a composite metal, and belongs to the technical field of graphene preparation. Background technique [0002] Graphene is a new material with a two-dimensional honeycomb lattice structure. It has excellent electrical, thermal and mechanical properties and is expected to be widely used in high-performance nanoelectronic devices, composite materials, field emission materials, gas sensors and energy storage. It has broad application prospects in industry, power industry and electronics industry. [0003] Graphene is made of carbon atoms with sp 2 The atomic-level two-dimensional crystal material in the hexagonal honeycomb lattice formed by orbital hybridization has a high carrier mobility dozens of times higher than that of commercial silicon wafers, and is little affected by temperature and doping effects, showing Excellent electron transport p...

Claims

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Application Information

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IPC IPC(8): C01B32/184
Inventor 杨志远于法鹏赵莉莉张晶李清波程秀凤陈秀芳赵显
Owner SHANDONG UNIV
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