Organic film cmp slurry composition and polishing method using same

A technology of organic membranes and components, applied in chemical instruments and methods, other chemical processes, electrical components, etc.

Active Publication Date: 2018-06-08
SAMSUNG SDI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, such typical CMP slurry compositions do not provide the desired selectivity ratio of organic to inorganic membranes in the ILD process.

Method used

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  • Organic film cmp slurry composition and polishing method using same
  • Organic film cmp slurry composition and polishing method using same
  • Organic film cmp slurry composition and polishing method using same

Examples

Experimental program
Comparison scheme
Effect test

preparation example

[0182] Preparation of organic film composition

[0183] A 2,000 ml 3-neck flask including a thermometer, condenser, mechanical stirrer and dropping funnel was immersed in an oil bath at 140°C. Heating and stirring were performed on a hot plate by a magnet, and the temperature of cooling water in the condenser was set to 40°C. 220 grams of 1.0 moles of 1-methoxypyrene and 138 grams of 1.0 moles of 1,4-bismethoxymethylbenzene were added to the reactor, and then dissolved in 656 grams of propylene glycol monomethyl ether acetate. Thereafter, 4.6 grams of 0.03 molar diethyl sulfate were added to the reactor. The temperature of the reactor was maintained at 130°C. The reaction completion point is determined by measuring the molecular weight of the reaction product at regular time intervals during the polymerization. Here, a sample for measuring the molecular weight was prepared by quenching 1 g of the reaction product to room temperature, and then diluting 0.02 g of the reacti...

example 1 to example 2 and comparative example 1 to comparative example 4

[0193] A CMP slurry composition (unit: weight % based on the total amount of the composition) comprising the components listed in Table 1 was prepared, and the patterned crystal comprising a silicon oxide layer and an organic film was prepared under the following conditions: circle for grinding.

[0194] (1) Details of the components of the CMP slurry composition

[0195] (A) abrasive

[0196] (a1) Colloidal cerium oxide (SOLVAY Co., Ltd.) having an average particle diameter of 60 nm was used.

[0197] (a2) Colloidal cerium oxide (FUSO Co., Ltd.) having an average particle diameter of 30 nm was used.

[0198] (B) reducing agent

[0199] (b1) Cerium nitrate (Aldrich Co., Ltd.) was used.

[0200] (b2) Titanium trichloride (KANTO Co., Ltd.) was used.

[0201] (C) pH adjuster: nitric acid (Samchun Chemical Co., Ltd.) was used.

[0202] (2) Grinding conditions and measurement of grinding rate and selectivity ratio

[0203] As a polishing pad, an H0800CMP pad (FUJIBO Co.,...

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Abstract

The present invention relates to an organic film CMP slurry composition and a polishing method using same. The organic CMP slurry composition comprises ceria and cerium nitrate, wherein the selectivity in accordance with following formula (1) is approximately 100 or higher: [Formula (1)] Selectivity = [alpha] / [beta] (wherein [alpha] is a polishing amount (Aa / min) of an organic film and [beta] is apolishing amount (Aa / min) of an inorganic film).

Description

technical field [0001] The invention relates to a chemical mechanical polishing (CMP) slurry composition of an organic film and a polishing method using the same. Background technique [0002] Recently, as the degree of integration and performance of semiconductor devices increase, the line width of interconnection patterns becomes narrower and the interconnection patterns become multi-layered. To improve the accuracy of photolithography performed in the fabrication of semiconductor devices, the flatness between layers in each process is a key factor. Currently, the chemical mechanical polishing process has been highlighted as a planarization technology. The CMP process can be classified into oxide film CMP, metal CMP, polysilicon (poly-Si) CMP, organic film CMP, etc. according to the material to be polished. [0003] An example of a semiconductor process using CMP to polish an organic film (C-SOH) includes an interlayer dielectric (ILD) process. The ILD process is a proc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/14H01L21/306
CPCC09K3/14H01L21/306
Inventor 崔正敏都均奉姜东宪金东珍兪龙植郑荣哲赵炫洙
Owner SAMSUNG SDI CO LTD
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