MXene-material-based flexible strain sensor
A strain sensor and flexible technology, applied in the direction of electric/magnetic solid deformation measurement, electromagnetic measurement devices, etc., can solve the problem that flexible strain sensors cannot have both high strain sensitivity and large strain sensing range, and accelerate the practical process and preparation of flexible strain sensors. Complex process and other problems, to achieve the effect of wide strain sensing range, large strain sensing range and simple manufacturing process
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[0049] The invention relates to an MXene-based flexible strain sensor and a preparation method thereof. The MXene conductive film is prepared by using the MXene material, and combined with a flexible substrate and an electrode to obtain an MXene-based flexible strain sensor. A flexible strain sensor with high sensitivity and wide strain sensing range is obtained through the junction properties of MXene materials. The flexible strain sensor of the present invention has both high strain sensitivity and strain sensing range, and can effectively sense deformations such as tension, pressure, bending and torsion. The induction mechanism is that when the multi-layered MXene conductive film deforms with the flexible substrate, the resistance of the conductive path changes through the relative slip between the layers and the cracks in the film.
[0050] The flexible strain sensor of the present invention comprises: a flexible substrate, a sensitive material and electrodes; the sensitiv...
Embodiment 1
[0067] At 3.0g 200 mesh Ti 3 AlC 2 Add 30.0ml of hydrofluoric acid with a mass fraction of 40wt% to the powder, and etch for 2 hours. Wash the etched product by centrifugation with deionized water until the pH is greater than 5, and freeze-dry for 12 hours to obtain Ti 3 C 2 powder. Take 1.0g Ti 3 C 2 powder, add 12.0ml dimethyl sulfoxide and stir for 18h, wash off dimethyl sulfoxide by centrifugation with deionized water, then add 300.0ml deionized water, ultrasonicate in an ice-water bath under an argon atmosphere for 5h, and then put the ultrasonic product at 3500rpm Centrifuge for 1 h, and the supernatant obtained after separation is Ti 3 C 2 Single layer or few layers. Take 100.0ml of the supernatant through vacuum filtration and vacuum drying to obtain a conductive film. Pour the uncured PDMS into the mold, pre-cure at 80°C for 10min, transfer the conductive film cut into 6.0mm×10.0mm onto the PDMS, cure at 80°C for 40min, and then remove the filter membrane on ...
Embodiment 2
[0070] At 3.0g 200 mesh Ti 3 AlC 2 Add 30.0ml of hydrofluoric acid with a mass fraction of 40wt% to the powder, and etch for 6h. Wash the etched product by centrifugation with deionized water until the pH is greater than 5, and freeze-dry for 12 hours to obtain Ti 3 C 2 powder. Take 1.0g Ti 3 C 2 powder, add 12.0ml dimethyl sulfoxide and stir for 18h, wash off dimethyl sulfoxide by centrifugation with deionized water, then add 300.0ml deionized water, ultrasonicate in an ice-water bath under an argon atmosphere for 5h, and then put the ultrasonic product at 3500rpm Centrifuge for 1 h, and the supernatant obtained after separation is Ti 3 C 2 Single layer or few layers. Take 100.0ml of the supernatant through vacuum filtration and vacuum drying to obtain a conductive film. Pour the uncured PDMS into the mold, pre-cure at 80°C for 10min, transfer the conductive film cut into 6.0mm×10.0mm onto the PDMS, cure at 80°C for 40min, and finally remove the filter membrane on th...
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