Semiconductor device, manufacturing method thereof and electronic device

A manufacturing method and semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., can solve the problems of small area, small number of turns, and multi-chip area of ​​inductive devices, so as to improve the inductance coefficient, inductance Capability enhancement, the effect of improving RF performance

Inactive Publication Date: 2018-06-29
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The inductance integrated in current semiconductor devices generally has a low inductance. This is because the area of ​​the inductor is small, the number of turns is small, and the magnetic properties of the internal film are low, which is not conducive to meeting the requirements of integrated circuits such as radio frequency. Increasing demands on inductive devices
In the current manufacturing process, in order to obtain a larger inductance value, more loop coil structures need to be manufactured, which will occupy a lot of chip area, which is not conducive to chip integration

Method used

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  • Semiconductor device, manufacturing method thereof and electronic device
  • Semiconductor device, manufacturing method thereof and electronic device
  • Semiconductor device, manufacturing method thereof and electronic device

Examples

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Embodiment 1

[0040] The following will refer to figure 1 , Figure 2A ~ Figure 2G as well as image 3 A method for fabricating a semiconductor device according to an embodiment of the present invention will be described in detail.

[0041] First, step 101 is performed to provide a device wafer, the device wafer includes a semiconductor substrate 200 and a device layer 201, an isolation layer 202 is formed on the device wafer, and a first barrier layer is formed on the isolation layer And / or seed layer 203, on described first barrier layer and / or seed layer 203, form the patterned photoresist layer 204 of Li, and carry out copper electroplating with the photoresist layer 204 of described pattern as mask process to form the first metal layer 205, the formed structure is as Figure 2A shown.

[0042] The semiconductor substrate 200 can be at least one of the materials mentioned below: Si, Ge, SiGe, SiC, SiGeC, InAs, GaAs, InP or other III / V compound semiconductors, and also includes multi...

Embodiment 2

[0072] The present invention also provides a semiconductor device, such as Figure 4As shown, the semiconductor device includes: a device wafer, the device wafer includes a semiconductor substrate 400 and a device layer 401, an isolation layer 402 is formed on the device wafer, and multiple layers are formed on the isolation layer 402 Layer stacked structure, each layer of stacked structure includes a layer of metal layer 403 and a layer of dielectric layer 404 covering the metal layer, multiple layers of the metal layer 403 form at least one inductor coil structure, in the dielectric layer 404 and each A magnetic core 405 is formed at a position corresponding to the central area of ​​the inductor coil structure.

[0073] Wherein, the semiconductor substrate 400 can be at least one of the materials mentioned below: Si, Ge, SiGe, SiC, SiGeC, InAs, GaAs, InP or other III / V compound semiconductors, and also includes multiple semiconductors composed of these semiconductors. The l...

Embodiment 3

[0079] Still another embodiment of the present invention provides an electronic device, including a semiconductor device and an electronic component connected to the semiconductor device. Wherein, the semiconductor device includes: a device wafer, an isolation layer is formed on the device wafer, a multi-layer stack structure is formed on the isolation layer, each layer stack structure includes a metal layer and a layer covering the A dielectric layer of the metal layer, wherein multiple layers of the metal layer form at least one inductive coil structure, and a magnetic core is formed in the dielectric layer at a position corresponding to a central area of ​​each inductive coil structure.

[0080] Wherein, the device wafer includes a semiconductor substrate and a device layer. The semiconductor substrate can be at least one of the materials mentioned below: Si, Ge, SiGe, SiC, SiGeC, InAs, GaAs, InP or other III / V compound semiconductors, including multilayer structures compos...

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PUM

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Abstract

The invention provides a semiconductor device, a manufacturing method thereof and an electronic device. The manufacturing method comprises the steps of providing a device wafer; forming an isolation layer on the device wafer; forming a multi-layer laminated structure on the isolation layer, wherein each layer of the laminated structure comprises a metal layer and a dielectric layer covering the metal layer, the multiple metal layers form at least one inductive coil structure; and forming a magnetic core at the position corresponding to a central area of the laminated structure and the inductive coil structure. According to the manufacturing method, the induction coefficient and inductance of an inductance device, and thus the radio frequency performance of semiconductor devices such as anRF device is improved. The semiconductor device and the electronic device have the similar advantages.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device, a manufacturing method thereof, and an electronic device. Background technique [0002] With the rapid development of wireless mobile communication technology, radio frequency integrated circuits are becoming more and more important. Radio frequency integrated circuits are integrated circuits that work in the frequency range of 300MHz to 300GHz. In radio frequency integrated circuits, inductors play a very important role, becoming a key electronic component and widely used in various radio frequency integrated circuits, such as voltage controlled oscillators, low noise amplifiers and mixers, etc. Inductors are required to meet the requirements of low loss and high integration. [0003] The inductance integrated in current semiconductor devices generally has a low inductance. This is because the area of ​​the inductor is small, the number of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/64
CPCH01L28/10
Inventor 朱继光李海艇何作鹏
Owner SEMICON MFG INT (SHANGHAI) CORP
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