Method for transversely trimming and reducing magnetic tunnel junction pattern
A magnetic tunnel junction and lateral technology, applied in the manufacture/processing of electromagnetic devices, static memory, instruments, etc., can solve the problems of increasing manufacturing costs, failing to meet the requirements of line width, and low density
Active Publication Date: 2018-06-29
SHANGHAI CIYU INFORMATION TECH
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Problems solved by technology
If 193nm ArF dry process or 248nm KrF lithography technology is used, due to the limitation of the resolution of the lithography machine, then the requirement of making small-sized MTJ line width will not be met; want to prepare small-sized magnetic tunnel junction ( MTJ) array requires finer lithography technology, such as: 193i wet process (immersion), EUV or EBL, etc., which undoubtedly increases the manufacturing cost
At the same time, compared with traditional semiconductors, the MTJ size and pattern density in MRAM circuits are relatively small, which increases the risk of MTJ patterns disappearing during pattern transfer
Method used
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[0031] In order to solve the above problems, the present invention provides a method for laterally trimming the miniature magnetic tunnel junction pattern, which defines the magnetic tunnel junction pattern on the photoresist through a photolithography process, and then passes through a two-step lateral trimming process, that is: The trimming of the film layer or photoresist, and the trimming of the hard mask film layer make the originally obtained pattern 1 into a magnetic tunnel junction pattern 2 that is reduced to a finer size, and finally the magnetic tunnel junction array is completed by an etching process patterned, such as figure 1 shown.
[0032] Preferred embodiments of the method of the present invention are specifically described below.
[0033] figure 2 is a flowchart of a method for laterally trimming a miniature magnetic tunnel junction pattern according to a preferred embodiment of the present invention.
[0034] Such as figure 2As shown, the method for l...
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Abstract
The invention discloses a method for transversely trimming and reducing a magnetic tunnel junction pattern, comprising the following steps: S1, forming a magnetic tunnel junction multilayer film, a hard mask layer and a sacrificial mask layer in sequence on a substrate of a bottom electrode; S2, forming a magnetic tunnel junction pattern, and trimming and reducing the magnetic tunnel junction pattern through a transverse trimming process; S3, etching the sacrificial mask layer and the hard mask layer, and continuing trimming the magnetic tunnel junction pattern through the transverse trimmingprocess to obtain a smaller magnetic tunnel junction mask; and S4, etching the magnetic tunnel junction multilayer film to make a miniaturized magnetic tunnel junction.
Description
technical field [0001] The present invention relates to the field of magnetic random access memory (MRAM, Magnetic Random Access Memory) manufacture technology, relate in particular to the preparation of small-sized MRAM circuit, specifically, the present invention relates to using a kind of lateral trimming (TRIM) process to the magnetic tunnel junction (MTJ , Magnetic Tunnel Junction) pattern miniature method. Background technique [0002] In recent years, MRAM using the magnetoresistance effect of MTJ is considered to be the future solid-state non-volatile memory, which has the characteristics of high-speed reading and writing, large capacity and low energy consumption. Ferromagnetic MTJ is usually a sandwich structure, which has a magnetic memory layer, which can change the magnetization direction to record different data; an insulating tunnel barrier layer in the middle; a magnetic reference layer, located on the other side of the tunnel barrier layer, which The direct...
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Login to View More IPC IPC(8): H01L43/12G11C11/16
CPCG11C11/161H10N50/01
Inventor 张云森肖荣福
Owner SHANGHAI CIYU INFORMATION TECH