Semiconductor component comprising a first temperature measuring element and method for determining a current flowing through a semiconductor component

A temperature measurement and semiconductor technology, which is applied in the field of vehicle control devices to achieve the effects of reducing consumption, reducing effective costs and saving costs

Active Publication Date: 2018-07-17
ROBERT BOSCH GMBH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Furthermore, with shunt or magnetic sensors, additiona

Method used

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  • Semiconductor component comprising a first temperature measuring element and method for determining a current flowing through a semiconductor component
  • Semiconductor component comprising a first temperature measuring element and method for determining a current flowing through a semiconductor component
  • Semiconductor component comprising a first temperature measuring element and method for determining a current flowing through a semiconductor component

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Embodiment Construction

[0039] Firstly, FIG. 1 shows a possibility according to the prior art for ascertaining the current flowing through a semiconductor component 10 in the form of a current sensor with divided cells. A main FET (Field Effect Transistor) 2 is shown in the right part of the figure. The main FET is connected as usual with a source contact 3 , a drain contact 4 and a gate contact 5 . Measuring FET 6 is shown in the left region of the drawing. The measurement FET is connected in parallel with the main FET 1 and consists of some divided cells, but otherwise identical to those of the main FET 1 . The separated cells are used as current mirrors. The current I can be read at the current measuring point 8 with the aid of an external resistor 7 Sense , which allows a direct inference of the current flowing through the main FET1. However, resistor 7 can limit the dynamics and accuracy of the current measurement. Furthermore, in solutions known from the prior art, temperature sensors and ...

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Abstract

A semiconductor component (10) comprising a substrate and at least two temperature measuring elements (20, 22) is described. The two temperature measuring elements (20, 22) are arranged on a bare die(11) of the semiconductor component (10) at different positions within the semiconductor component (10). In particular, one temperature measuring element (20) can be arranged in an active region (14)of the semiconductor component (10), and one temperature measuring element (22) can be arranged in a passive region (16) of the semiconductor component (10). The temperature measuring elements (20, 22) measure two different temperatures TJ, Tsense, with the aid of which the current IDS through the semiconductor component (10) can then be calculated. The semiconductor component may be a power MOSFET (18). Furthermore, a method for determining a current IDS flowing through a semiconductor component (10) is described, wherein two temperatures measured at different locations of the semiconductor component (10) are used. The semiconductor component (10) described and the method described are suitable for example for use in a control unit for a vehicle.

Description

technical field [0001] The invention relates to a semiconductor component, preferably a power MOSFET element, as well as a method for producing the semiconductor component and a control device for a vehicle. Background technique [0002] Requirements for modern semiconductor switches such as power MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistor) and IGBTs (insulated-gate bipolar Transistor) In addition to very low conduction and switching losses and a high blocking capability, more and more monolithically integrated functions are included which enable the reliable detection of overloads such as ESD - Impulse (electrostatic discharge, English: Electrostatic Discharge), overheating temperature, breakdown or overcurrent. In power electronics systems, for example for motor control, the phase currents for regulating the system are of decisive importance. Excessively high currents during the switching process can lead to breakdowns and possibly destruction of the comp...

Claims

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Application Information

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IPC IPC(8): G01K7/01B62D5/04
CPCG01K7/01H03K17/74
Inventor J·朱斯W·冯埃姆登
Owner ROBERT BOSCH GMBH
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