Method for making flexible light-emitting film

Abstract

The invention relates to a method for making a flexible light-emitting film. The method comprises: S1, a gallium-nitride LED epitaxial wafer with a sapphire substrate layer is prepared, wherein the GaN LED epitaxial wafer consists of an N-Gan a layer, an MQWs layer and a P-Gan layer that are arranged successively from bottom to top and the N-Gan layer is arranged on the sapphire substrate layer; S2, a SiO2 layer is formed at the P-Gan layer, wherein the SiO2 layer has a preset hollow-out region exposing the P-Gan layer; S3, the N-Gan a layer, the MQWs layer and the P-Gan layer are processed along the hollow-out region of the SiO2 layer to form a through hole penetrating the N-Gan a layer, the MQWs layer and the P-Gan layer; S4, the SiO2 layer is removed; S5, a transparent filling layer isformed to fill the through hole; S6, a first transparent electrode layer is formed on the P-Gan layer; S7, a transparent flexible substrate layer is formed on the first electrode layer; S8, the sapphire substrate layer is removed; and S9, a second transparent electrode layer is formed on the N-Gan layer. In addition, the invention also provides a flexible light-emitting film. With the making method, the light extraction rate of the light-emitting film is improved.

Description

technical field [0001] The invention relates to a manufacturing process of a semiconductor light-emitting element, in particular to a flexible light-emitting film and a manufacturing method thereof. Background technique [0002] In the existing LED, the light emitted from the quantum well is mainly concentrated under the electrode. The metal electrode used in the existing LED has a low transmittance to light, and the substrate material and GaN material of the existing LED have a high refractive index. It will also cause most of the light to be reflected and absorbed inside the chip, resulting in low external quantum efficiency of the LED. For this reason, improving the light output rate of LEDs has become a research hotspot, and many methods have been developed to improve the external quantum efficiency, such as roughening the chip material, designing the device's morphology and structure, and trying different packaging forms. For a better light output effect, each method h...

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Problems solved by technology

[0002] In the existing LED, the light emitted from the quantum well is mainly concentrated under the electrode. The metal electrode used in the existing LED has a low transmittance to light, and the substrate material and GaN material of the existing LED have a high refractive index. It will also cause most of the light to be reflected and absorbed inside the chip, resulting in low external quantum efficiency of the LED.

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