Single cantilever type gas sensor with curled structure and sensor array

A gas sensor, single cantilever technology, applied in instruments, scientific instruments, measuring devices, etc., can solve the problems of complex process, difficult positioning, low efficiency, etc., and achieve the effect of simple process, easy preparation, and improved production efficiency

Pending Publication Date: 2018-07-24
HEFEI MICRO NANO SENSING TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the power consumption of these multi-cantilever gas sensors is low, with the rapid development of mobile terminals and Internet of Things applications, they can no longer meet the needs
At the same time, there are problems such as complex process, difficult positioning and low efficiency in the preparation of multi-cantilever gas sensors.

Method used

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  • Single cantilever type gas sensor with curled structure and sensor array
  • Single cantilever type gas sensor with curled structure and sensor array
  • Single cantilever type gas sensor with curled structure and sensor array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] refer to Figure 1 to Figure 4 , this embodiment provides a warped single-cantilever gas sensor, including a silicon substrate 1 , a support film 2 , a heating resistor 3 , an isolation film 4 , a detection electrode 5 and a gas-sensing material 6 .

[0035] The sensor has a base structure and a suspension beam structure. Generally, the base structure is rectangular, and the suspension beam structure is arranged in the middle of a long side of the base structure. Therefore, the horizontal projection of the sensor is in a "T" shape. Its specific structure is as follows:

[0036] The upper and lower end faces of the silicon substrate 1 are rectangular;

[0037] The support film 2 is used to support the entire suspension beam structure, which is a silicon nitride layer. It includes a first base 21 , a first cantilever 22 and a first crimp 23 . The first base 21 is rectangular, the first cantilever 22 is connected to the middle of a long side of the first base 21, and th...

Embodiment 2

[0060] Such as Figure 5 As shown, the difference between this embodiment and Embodiment 1 is that the horizontal projections of the first cantilever 22, the second cantilever 32, the third cantilever 42 and the fourth cantilever 52 are all in the shape of an isosceles trapezoid, and the direction, the widths of the first cantilever 22 , the second cantilever 32 , the third cantilever 42 and the fourth cantilever 52 gradually increase. By widening the connection width between the cantilever beam structure and the base structure, while retaining the low power consumption characteristic of the single cantilever beam structure, the mechanical strength of the entire sensor is also improved.

[0061] Compared with the first embodiment, the preparation method of the sensor described in this embodiment is only different in the preparation parameters.

Embodiment 3

[0063] In the application of odor identification, it is often necessary to integrate many sensors to work together. Because of the unique structure of the single cantilever sensor with the coiled structure described in the above-mentioned embodiment 1 and embodiment 2, it is very easy to realize multiple The integration of sensors constitutes a sensor array. Such as Figure 6 As shown, the present embodiment provides a sensor array, which is flattened by the above-mentioned single cantilever sensor with a curled structure, wherein the cantilever structure of each sensor is located on the same side of the base structure. Of course, the cantilever structures of the sensors can also be distributed on both sides of the base structure or in other arrangements as required.

[0064] The preparation method of the sensor array described in this embodiment is equivalent to the preparation method of the sensor in the first embodiment, it only needs to set the etching conditions in step ...

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PUM

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Abstract

The invention discloses a single cantilever type gas sensor with a curled structure. The single cantilever type gas sensor comprises a silicon substrate, a supporting membrane, a heating resistor, anisolating membrane and a detection electrode which are sequentially arranged in a stacking mode, wherein the supporting membrane is used for providing a whole supporting effect, the heating resistor is used for providing temperature required by work, the heating resistor and the detection resistor are electrically separated by the isolating membrane, and the detection sensor is used for detectingresistance change. The sensor comprises a base body structure and a cantilever structure, wherein the end of the cantilever structure is in a curled shape, and a gas sensing material is arranged on the cantilever structure. The invention further provides a sensor array composed by the single cantilever type gas sensor with the curled structure. The single cantilever type gas sensor disclosed by the invention has the advantages of low power consumption, high integration, simple production technology, easiness in location and ability in effective improvement production efficiency.

Description

technical field [0001] The invention belongs to the technical field of micro-electro-mechanical systems and gas detection, and in particular relates to a single-cantilever-beam gas sensor and a sensor array with a curled structure. Background technique [0002] Gas sensors based on microelectromechanical systems (MEMS) technology, due to their small size, low power consumption, high sensitivity and fast response, gradually show great application potential, and are expected to replace gas sensors based on traditional technologies. It is widely used in the fields of networking, mobile terminal and artificial intelligence. In the MEMS gas sensor, because the sensor using the metal oxide semiconductor (MOS) material has a wide detection range, it has a broader market space in the future large-scale application. [0003] At present, among the MEMS MOS gas sensors, the research based on the suspended film micro-heater is the majority. The sensor with this structure has low power ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12
CPCG01N27/128
Inventor 许磊彭书峰谢东成周睿颖
Owner HEFEI MICRO NANO SENSING TECH CO LTD
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