High-performance reference voltage source and implementation method thereof

Abstract

The invention discloses a high-performance reference voltage source and an implementation method thereof. The high-performance reference voltage source a positive temperature coefficient PTAT currentgenerating circuit for generating a positive temperature coefficient current I0; a bias circuit for stabilizing a gate voltage of each of the PMOS transistors of the mirror constant current source ata design value; a mirror constant current source for supplying current I0 to the positive temperature coefficient PTAT current generating circuit and outputting the current to a current voltage converting circuit; a negative temperature coefficient CTAT voltage generating circuit for proportionally generating a negative temperature coefficient CTAT current I1 of the base emitter voltage of a transistor of the positive temperature coefficient PTAT current generating circuit to the current voltage converting circuit; a current-voltage conversion circuit for converting the positive temperature coefficient current I0 into a positive temperature coefficient voltage, and converting the negative temperature coefficient CTAT current into a negative temperature coefficient voltage, and superimposing the two voltages to obtain a reference voltage.

Description

technical field [0001] The invention relates to a reference voltage source, in particular to a high-performance reference voltage source. Background technique [0002] The reference voltage source is one of the important modules in the analog integrated circuit. It is widely used in circuits such as power management chips, digital-to-analog converters, and phase-locked loops to provide stable reference voltages for circuits. An ideal voltage reference is a quantity independent of supply voltage, process, and temperature. With the development of integrated circuit technology and the development of portable electronic equipment, the design of low power consumption and low voltage of circuits has been paid more and more attention. In this context, the reference voltage source with low power consumption, low voltage, high output accuracy and small area has become a research hotspot today. [0003] Traditional bandgap references are generally based on the base-emitter voltage o...

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Problems solved by technology

[0003] Traditional bandgap references are generally based on the base-emitter voltage of a CMOS BJT device (V be ), this type of reference circuit has good temperature characteristics and process consistency, but it has excessive power consumption (the circuit operating current is tens of microamperes or even hundreds of microamperes), and the operating voltage is high (usually greater than 1.5V) problems, cannot meet the requirements of modern integrated circuit systems

So people began to study the reference circuit based on the threshold voltage of the MOS transistor. This type of reference circuit has the ability to work at a lower voltage (usually the operating voltage is less than 1V) and low power consumption (the circuit operating current is less than 1 microampere), but there are The problem that the output voltage varies greatly with the process

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