A kind of semiconductor device and its manufacturing method, electronic device

A manufacturing method and semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., to achieve the effects of increasing contact area, improving device power consumption, and increasing gate capacitance

Active Publication Date: 2021-03-19
SEMICON MFG NORTH CHINA (BEIJING) CORP +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these efforts still cannot solve the above problems very well.

Method used

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  • A kind of semiconductor device and its manufacturing method, electronic device
  • A kind of semiconductor device and its manufacturing method, electronic device
  • A kind of semiconductor device and its manufacturing method, electronic device

Examples

Experimental program
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Effect test

Embodiment 1

[0046] The following will refer to Figure 3A ~ Figure 3G A method for fabricating a semiconductor device according to an embodiment of the present invention will be described in detail. It can be understood that the flash memory includes not only the memory (cell) but also the peripheral area, and the manufacturing method of the semiconductor device in this embodiment is mainly aimed at the storage area of ​​the flash memory, so in Figure 3A ~ Figure 3G Only a schematic cross-sectional view of the flash memory storage area is shown in , where Figure 3A ~ Figure 3G It is a cross-sectional view of a flash memory storage unit along the length direction of the floating gate. The so-called length direction of the floating gate refers to the direction perpendicular to the source and drain lines or the word line direction.

[0047] Firstly, a semiconductor substrate 300 is provided, and a gate dielectric layer 301 and a floating gate material layer 302 on the gate dielectric laye...

Embodiment 2

[0071] The present invention also provides a semiconductor device, such as Figure 4 As shown, the semiconductor device includes: a semiconductor substrate 400, an isolation structure 401 is formed in the semiconductor substrate 400 and an active region is separated by the isolation structure, and a gate dielectric is formed on the active region layer 402 and a floating gate 403 located on the gate dielectric layer 402; an isolation layer 404 and a control gate located on the isolation layer 404 are formed on the floating gate 403, wherein the floating gate 403 It includes a main body 4030 on the gate dielectric layer 402 and protrusions 4031 located at two ends of the main body 4030 and protruding toward the control gate.

[0072] Wherein, the semiconductor substrate 400 can be at least one of the materials mentioned below: Si, Ge, SiGe, SiC, SiGeC, InAs, GaAs, InP or other III / V compound semiconductors, and also include multiples composed of these semiconductors. The layer ...

Embodiment 3

[0080] Still another embodiment of the present invention provides an electronic device, including a semiconductor device and an electronic component connected to the semiconductor device. Wherein, the semiconductor device includes: a semiconductor substrate on which a floating gate is formed; a control gate is formed on the floating gate, wherein the floating gate includes a A main body and protrusions located at both ends of the main body and protruding toward the control grid.

[0081] Wherein, the semiconductor substrate can be at least one of the materials mentioned below: Si, Ge, SiGe, SiC, SiGeC, InAs, GaAs, InP or other III / V compound semiconductors, and multilayers composed of these semiconductors The structure or the like may be silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon-germanium-on-insulator (S-SiGeOI), silicon-germanium-on-insulator (SiGeOI), and germanium-on-insulator (GeOI). Devices, such as NMOS and / or PMOS, can be formed on the semiconduc...

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Abstract

The present invention provides a semiconductor device, a manufacturing method thereof, and an electronic device. The manufacturing method includes: providing a semiconductor substrate, forming a floating gate on the semiconductor substrate; forming a control gate on the floating gate, wherein the The floating gate includes a main body over the semiconductor substrate and protrusions located at both ends of the main body and protruding toward the control gate. The manufacturing method can increase the gate capacitance between the control gate and the floating gate interface, improve device power consumption, and reduce leakage current. The semiconductor device and electronic device have similar advantages.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device, a manufacturing method thereof, and an electronic device. Background technique [0002] With the development of semiconductor manufacturing technology, flash memory (flash memory) with faster access speed has been developed in terms of storage devices. Flash memory has the characteristics that information can be stored, read, and erased multiple times, and the stored information will not disappear after power failure. Therefore, flash memory has become a popular choice for personal computers and electronic devices. A widely used type of non-volatile memory. [0003] As devices shrink, the power consumption of flash memory is getting worse, so ultra-shallow junctions and abrupt junctions have been used to improve the short-channel effect of core devices. However, even meeting gate material requirements, the balance of power dissipation and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11517H01L29/788H01L21/28H01L21/8239H01L21/336
CPCH01L29/66825H01L29/788H01L21/28H10B99/00H10B41/00
Inventor 赵猛
Owner SEMICON MFG NORTH CHINA (BEIJING) CORP
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