A kind of semiconductor device and its manufacturing method, electronic device

A manufacturing method and semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., to achieve the effects of increasing contact area, improving device power consumption, and increasing gate capacitance
CN108336086BActive Publication Date: 2021-03-19SEMICON MFG NORTH CHINA (BEIJING) CORP +2
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Patents(China)
Current Assignee / Owner
SEMICON MFG NORTH CHINA (BEIJING) CORP
Publication Date
2021-03-19

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Abstract

The present invention provides a semiconductor device, a manufacturing method thereof, and an electronic device. The manufacturing method includes: providing a semiconductor substrate, forming a floating gate on the semiconductor substrate; forming a control gate on the floating gate, wherein the The floating gate includes a main body over the semiconductor substrate and protrusions located at both ends of the main body and protruding toward the control gate. The manufacturing method can increase the gate capacitance between the control gate and the floating gate interface, improve device power consumption, and reduce leakage current. The semiconductor device and electronic device have similar advantages.
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Description

technical field

[0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device, a manufacturing method thereof, and an electronic device. Background technique

[0002] With the development of semiconductor manufacturing technology, flash memory (flash memory) with faster access speed has been developed in terms of storage devices. Flash memory has the characteristics that information can be stored, read, and erased multiple times, and the stored information will not disappear after power failure. Therefore, flash memory has become a popular choice for personal computers and electronic devices. A widely used type of non-volatile memory.

[0003] As devices shrink, the power consumption of flash memory is getting worse, so ultra-shallow junctions and abrupt junctions have been used to improve the short-channel effect of core devices. However, even meeting gate material requirements, the balance of power dissipation and ...

Claims

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