Half-metal preparation process of MnAs/GaAs-based interface

Abstract

The invention discloses a half-metal preparation process of a MnAs / GaAs-based interface. The half-metal preparation process comprises the following steps of 1, building sphalerite MnAs crystal structure, and optimizing a lattice structure; 2, calculating and analyzing state density of MnAs under a balance lattice constant aeq; 3, building and optimizing four interface structures in MnAs / GaAs (001)direction; 4, calculating and analyzing the state density of the optimized interface structure; and 5, obtaining the interface structure having half-metal characteristic by analysis and comparison. With the adoption of the scheme, various advantages of a spinning electron device can be developed to the best, and the half-metal preparation process has good market application value.

Description

technical field [0001] The invention relates to a preparation process based on the half-metallicity of the MnAs / GaAs interface. Background technique [0002] It is well known that obtaining high spin-polarized current is a key factor for the application of spintronic devices such as spin valves and spin filters. With 100% spin polarization, half-metallic materials can be regarded as ideal injection sources for spin injection from ferromagnets to semiconductors. Therefore, finding and synthesizing semi-metallic materials has become a concern of many theoretical and experimental workers. So far, many kinds of compounds have been found to be half-metallic ferromagnets, such as: rutile CrO 2 , transition metal carbon-sulfur compounds of sphalerite, semi- or full-Heusler alloys, and carbon-nitrogen-alkaline earth metal compounds of rock-salt structure. Among these half-metallic ferromagnets, sphalerite carbonitrides are considered to be very good spin-injection materials due t...

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Problems solved by technology

[0005] Therefore, the existing process method is backward and needs to be improved

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