A kind of silicon-doped boron nitride/graphene pn junction type ultraviolet detector preparation method
An ultraviolet detector, boron nitride technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of complex doping technology, complex structural design, lack of deep ultraviolet detectors, etc. Carrier mobility, effective absorption, and controllable technical processes
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Embodiment 1
[0050] In step 1), use acetone, absolute ethanol, and deionized water to ultrasonically wash the quartz glass substrate 5 times, each time for 10 minutes, and then dry it with a nitrogen gun for use. Then magnetron sputtering technology was used to pre-sputter and deposit a certain thickness of boron nitride thin layer. The target material was hexagonal boron nitride target (purity: 99.9), the sputtering power was 80W, the substrate temperature was 500°C, and the pressure was 1Pa, Ar:N 2 The volume ratio is 3:1. Gas flow Ar gas flow is 15sccm, N 2 is 5 sccm. The purpose of pre-sputtering the thickness of the thin layer is to reduce the lattice mismatch between the epitaxial layer and the substrate, and use the thin layer to relieve the generation of stress and the generation of smaller defects and dislocations.
[0051] Step 2), on the basis of the boron nitride thin layer, silicon-doped boron nitride is deposited by sputtering. Double-target co-sputtering technology is ad...
Embodiment 2
[0057] In step 1), use acetone, absolute ethanol, and deionized water to ultrasonically wash the quartz glass substrate 5 times, each time for 10 minutes, and then dry it with a nitrogen gun for use. Then magnetron sputtering technology was used to pre-sputter and deposit a certain thickness of boron nitride thin layer. The target material was hexagonal boron nitride target (purity: 99.9), the sputtering power was 80W, the substrate temperature was 500°C, and the pressure was 1Pa, Ar:N 2 The volume ratio is 3:1. Gas flow Ar gas flow is 15sccm, N 2 is 5 sccm. The purpose of pre-sputtering the thickness of the thin layer is to reduce the lattice mismatch between the epitaxial layer and the substrate, and use the thin layer to relieve the generation of stress and the generation of smaller defects and dislocations.
[0058] Step 2), on the basis of the boron nitride thin layer, silicon-doped boron nitride is deposited by sputtering. Double-target co-sputtering technology is ad...
Embodiment 3
[0063]In step 1), use acetone, absolute ethanol, and deionized water to ultrasonically wash the quartz glass substrate 5 times, each time for 10 minutes, and then dry it with a nitrogen gun for use. Then magnetron sputtering technology was used to pre-sputter and deposit a certain thickness of boron nitride thin layer. The target material was hexagonal boron nitride target (purity: 99.9), the sputtering power was 80W, the substrate temperature was 500°C, and the pressure was 1Pa, Ar:N 2 The volume ratio is 3:1. Gas flow Ar gas flow is 15sccm, N 2 is 5 sccm. The purpose of pre-sputtering the thickness of the thin layer is to reduce the lattice mismatch between the epitaxial layer and the substrate, and use the thin layer to relieve the generation of stress and the generation of smaller defects and dislocations.
[0064] Step 2), on the basis of the boron nitride thin layer, silicon-doped boron nitride is deposited by sputtering. Double-target co-sputtering technology is ado...
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