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An analytical method and analytical system for nbti degradation prediction under low-frequency AC stress mode

An analytical method and stress technology, applied in analytical systems, in the field of NBTI degradation prediction under low-frequency AC stress mode, can solve the problems of NBTI degradation and complex recovery characteristics, and achieve simple and accurate device reliability, few parameters, and wide applicability. Effect

Active Publication Date: 2021-05-25
EAST CHINA NORMAL UNIV
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Problems solved by technology

Under such dynamic conditions, the NBTI degradation and recovery characteristics become quite complicated

Method used

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  • An analytical method and analytical system for nbti degradation prediction under low-frequency AC stress mode
  • An analytical method and analytical system for nbti degradation prediction under low-frequency AC stress mode
  • An analytical method and analytical system for nbti degradation prediction under low-frequency AC stress mode

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Embodiment Construction

[0057] The present invention will be further described in detail in conjunction with the following specific implementation and accompanying drawings. The process, conditions, experimental methods, etc. for implementing the present invention, except for the content specifically mentioned below, are common knowledge and common knowledge in this field, and the present invention has no special limitation content.

[0058] The analysis method provided by the present invention introduces the innovative NBTI low-frequency AC analysis model, based on the traditional RD theory, taking into account the fast capture / release characteristics of electrons and the H 2 Lock-in effect to accurately account for NBTI degradation in low frequency AC stress mode. Analytic method of the present invention comprises the steps:

[0059] Step 1: Obtain the NBTI degradation RD model parameters of the p-MOSFET device.

[0060] Step 2: Based on the basic reaction-diffusion theory and H 2 The lock-in ef...

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Abstract

The present invention proposes an analytical method for NBTI degradation prediction under a low-frequency AC stress mode, comprising the following steps: Step 1: Obtain the NBTI degradation reaction-diffusion model parameters of p-MOSFET devices; Step 2: Based on the basic reaction-diffusion theory and H 2 The locking effect of the NBTI DC stress / recovery phase is obtained; Step 3: Based on the fast capture / release of electrons, an iterative analytical model is obtained to describe the low-frequency AC stress mode of the NBTI at any moment and the pressure in the AC cycle The non-iterative analytical model of NBTI at the end of the ON phase and the end of the recovery OFF phase; Step 4: According to the analytical model, predict the threshold voltage degradation of the NBTI low-frequency AC stress degradation mode of the p-MOSFET device.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to an analysis method and an analysis system for NBTI degradation prediction under a low-frequency AC stress mode. Background technique [0002] Negative bias temperature instability (NBTI) remains a reliability concern for today's high-k, metal-gate planar MOSFET and FinFET devices. NBTI effect leads to degradation of device parameters such as threshold voltage (ΔV T ) rise, linear and saturated drain current fall, transconductance and subthreshold slope reduction, etc., thereby degrading the performance of digital circuits, analog circuits and memories. In the past decades, the physical mechanism of NBTI has been intensively studied, and different explanations have been generated. The reaction-diffusion theory describes the traps (ΔN IT ), process-related gate insulator origin defects (ΔN HT ) and traps generated inside the gate insulating layer (ΔN OT ) is...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F30/367G06Q10/04G06F119/04G06F119/14
CPCG06Q10/04G06F30/333G06F30/367G06F2119/04G06F2119/06
Inventor 李小进张珀菁曾严孙亚宾石艳玲
Owner EAST CHINA NORMAL UNIV
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