A kind of lithography-free preparation method of GAAS-based LED chip

Abstract

A method for preparing a GaAs-based LED chip without photolithography, comprising the following steps: (1) growing an epitaxial layer on a GaAs substrate; (2) preparing a patch with electrode holes arranged; (3) preparing The patch is pasted on the GaAs-based LED epitaxial layer prepared in step (1); (4) Au film is deposited on the patch by evaporation, and the Au film at the electrode hole is in contact with the epitaxial layer to form a P electrode; (5) The patch is removed and annealed to obtain the P electrode; (6) Thinning and growing the N electrode on the GaAs substrate. In this method, a patch with electrode holes is designed, and the patch is bonded with a GaAs-based LED epitaxial wafer to prepare a P electrode, and the P electrode is obtained by direct electrode evaporation without photolithography, which avoids the preparation of GaAs by photolithography in the prior art. The P electrode of the base LED chip is caused by chemical corrosion or photoresist. The electrode size fluctuation problem avoids the fluctuation of photoelectric parameters, improves the production efficiency, and has a simple process and is suitable for large-scale production.

Description

technical field [0001] The invention relates to a method for preparing a GaAs-based LED chip without photolithography, and belongs to the field of optoelectronic technology. Background technique [0002] LED is a new light source for lighting in the 21st century. Under the same brightness, the power consumption of semiconductor lamps is only 1 / 10 of that of ordinary incandescent lamps, but the life span can be extended by 100 times. The LED device is a cold light source with high luminous efficiency, low working voltage, low power consumption, small size, flat packaging, easy to develop thin and light products, strong structure and long life. The light source itself does not contain harmful substances such as mercury and lead. No infrared and ultraviolet pollution, no pollution to the outside world during production and use. Therefore, semiconductor lamps have the characteristics of energy saving, environmental protection, and long life. Just like transistors replace electr...

AI Technical Summary

Problems solved by technology

[0008] In view of the problem that the P electrode preparation process of the existing GaAs-based LED chip is easy to cause electrode damage, the present invention provides a method for preparing a GaAs-based LED chip without photolithography. The preparation method has a simple process and can obtain P electrodes of uniform size. electrode and greatly improve production efficiency

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