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Bidirectional TVS device with anti-parallel diode and preparation method thereof

A technology of diodes and manufacturing methods, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as unsatisfactory, one-way one TVS is difficult to meet the diversification of two-way different voltage gears, etc., to improve the response. The effect of speed, power consumption and cooling advantages, excellent performance

Pending Publication Date: 2018-08-17
SHANGHAI CHANGYUAN WAYON MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the protection of many signal ports tends to be bidirectional protection. Nowadays, there are more and more occasions for bidirectional TVS applications. It is difficult for a single TVS to meet the diversification of bidirectional and different voltage levels. Requirements for two-way applications and more advanced packaging forms of mobile phones or other portable electronic products

Method used

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  • Bidirectional TVS device with anti-parallel diode and preparation method thereof
  • Bidirectional TVS device with anti-parallel diode and preparation method thereof
  • Bidirectional TVS device with anti-parallel diode and preparation method thereof

Examples

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Embodiment 1

[0049] The structure of the bidirectional TVS device with the antiparallel diode of the present embodiment is as follows Figure 14 As shown, it includes a P-type silicon substrate 22, the front of the P-type silicon substrate is provided with N-type doped regions 31 and P-type doped regions 32, and the back of the P-type silicon substrate is provided with N-type doped regions. Region 31 and P-type doped region 32, the N-type doped region on the front side of the P-type silicon substrate is made of metal 41, and the N-type doped region and P-type doped region on the back side of the P-type silicon substrate are made The interconnection metal 41 is drawn out; the distance between the N-type doped region and the P-type doped region on the back of the P-type silicon substrate is greater than zero.

[0050] Its preparation process is as Figure 2-14 Shown:

[0051] Step (1): growing an oxide layer 21 and an oxide layer 23 simultaneously on the front and back sides of the P-type ...

Embodiment 2

[0063] Such as Figure 15 As shown, the structure of the bidirectional TVS device with anti-parallel diodes in this embodiment differs from that in Embodiment 1 in that the distance between the N-type doped region and the P-type doped region on the back is zero. Its preparation process is identical with embodiment 1.

Embodiment 3

[0065] Such as Figure 16 As shown, the structure of the bidirectional TVS device with anti-parallel diodes in this embodiment is different from Embodiment 1 in that: the N-type doped region on the back is on the outside, and the P-type doped region is on the inside, which is opposite to Embodiment 1. Its preparation process is also basically the same as that of Example 1, the difference is only in the adjustment of the positions of the N-type doped regions on the front and back sides during preparation.

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Abstract

The present invention discloses a bidirectional TVS (Transient Voltage Suppressors) device with an anti-parallel diode and a preparation method thereof. The bidirectional TVS device comprises a P-typesilicon substrate, the front surface of the P-type silicon substrate is provided with an N-type doping region and a P-type doping region, the N-type doping region at the front surface of the P-type silicon substrate is subjected to metal leading-out, and the N-type doping region and the P-type doping region at the back surface of the P-type silicon substrate are subjected to interconnection metalleading-out; and the space between the N-type doping region and the P-type doping region at the back surface of the P-type silicon substrate is larger than or equal to 0. The device structure has better performances for protection of the next-level OVP circuit, the N+ concentration is low to allow the bidirectional TVS device to have ultra-low capacitance so as to greatly improve the response speed of the TVS device to signals, and the bidirectional TVS device can be applied to protection of a high-frequency data interface circuit. The ultra-low leakage current of the structure has obvious power consumption and heat dissipation advantages for the device itself.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a bidirectional TVS (Transient Voltage Suppressors) device with antiparallel diodes and a manufacturing method thereof. Background technique [0002] As the integration level of various ESD circuits continues to increase, the line width of integrated circuits also decreases. Transient voltages in the circuit, in the form of electrostatic discharge (ESD) or other forms, are therefore more susceptible to damage to electronic devices. Bi-directional TVS diodes can discharge surge pulses from the positive and negative poles at both ends of the data line, thereby protecting the system from various forms of transient high voltage impacts. Compared with unidirectional protection diodes, bidirectional TVS diodes can conduct in both directions, regardless of the polarity of the voltage applied to both ends, as long as the voltage is greater than the reverse trigger voltage, they c...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/861H01L21/329
CPCH01L29/0688H01L29/66136H01L29/8613
Inventor 蒋骞苑苏海伟赵德益赵志方张啸王允冯星星
Owner SHANGHAI CHANGYUAN WAYON MICROELECTRONICS
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