Hardware circuit for simulation of pulse neurons based on MOS field effect transistor and application thereof
A technology of field effect transistors and MOS transistors, which is applied in the field of hardware circuits for simulating pulsed neurons, can solve problems such as low integration, complex circuit structure, and high power consumption.
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[0025]refer to figure 1 , a hardware circuit for simulating pulse neurons based on MOS field effect transistors, including a first MOS transistor T1 of a feedback controller, a second MOS transistor T2 of an input signal controller, a third MOS transistor T3 and a fourth MOS transistor T3 constituting a leakage circuit The transistor T4, the fifth MOS transistor T5 and the sixth MOS transistor T6 constituting the first inverter M1, the seventh MOS transistor T7 and the eighth MOS transistor T8 constituting the second inverter M2, the first analog film capacitor C1 and The second analog film capacitor C2, the above-mentioned MOS transistors all have three electrodes, which are respectively the source electrode, that is, the s pole, the gate electrode, that is, the g pole, and the drain electrode, that is, the drain electrode, that is the d pole. The s pole of the third MOS transistor T3 in the leakage circuit and the first The d poles of the four MOS transistors T4 are connecte...
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