Light-emitting diode epitaxial wafer and fabrication method thereof

Abstract

The invention discloses a light-emitting diode epitaxial wafer and a fabrication method thereof, and belongs to the technical field of semiconductors. The epitaxial wafer comprises a substrate and a buffer layer, an N-type semiconductor layer, a quality improvement layer, a multi-quantum well layer and a P-type semiconductor layer which are sequentially laminated on the substrate, wherein the quality improvement layer comprises a stress relief layer and a defect blocking layer which are sequentially laminated, the stress relief layer comprises at least two InGaN layers which are sequentially laminated, the content of indium constituents in the at least two InGaN layers is gradually reduced along a lamination direction of the stress relief layer, the defect blocking layer comprises at leasttwo AlInGaN layers which are sequentially laminated, the content of aluminum constituents in the at least two AlInGaN layers is gradually reduced along a lamination direction of the defect blocking layer, and the content of indium constituents in the at least two AlInGaN layers is gradually reduced along the lamination direction of the defect blocking layer. By the epitaxial wafer, the stress canbe relieved, the defect is prevented from extending, and the quality of long crystal is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor light emitting device made by using the principle of semiconductor PN junction electroluminescence. The epitaxial wafer is the primary product in the process of manufacturing light-emitting diodes. [0003] At present, gallium nitride-based LEDs are receiving more and more attention and research. The epitaxial wafer includes a substrate and a buffer layer stacked on the substrate in sequence, an undoped gallium nitride layer, an N-type semiconductor layer, and a multi-quantum well layer. , an electron blocking layer and a P-type semiconductor layer. [0004] In the process of realizing the present invention, the inventor finds that there are at least the following problems in th...

AI Technical Summary

Problems solved by technology

There is a large lattice mismatch between sapphire or silicon wafer and gallium nitride, resulting in poor crystal quality of the epitaxial wafer, introducing dislocations and defects, resulting in increased stress in the epitaxial wafer

Moreover, with the lamination of each layer in the epitaxial wafer, the stress and defects in the epitaxial wafer will increase accordingly, which will affect the recombination of electrons and holes in the multi-quantum well layer and reduce the luminous efficiency of the LED.

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