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A kind of preparation method of LED epitaxial wafer that improves luminous efficiency

A technology for LED epitaxial wafers and luminous efficiency, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of cumbersome and complicated process steps, unfavorable promotion and application, and high cost required to achieve simple process steps, improve luminous efficiency, low cost effect

Active Publication Date: 2018-09-25
株洲雨轩科技有限公司
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Problems solved by technology

However, the focus of these traditional technical means is on how to grow InGaN materials with high quality, uniform composition, no segregation, and low stress and protect the grown InGaN well layer materials. Not only the process steps are cumbersome and complicated, but also The required cost is high, so this is not conducive to the further promotion and application of LED

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  • A kind of preparation method of LED epitaxial wafer that improves luminous efficiency
  • A kind of preparation method of LED epitaxial wafer that improves luminous efficiency
  • A kind of preparation method of LED epitaxial wafer that improves luminous efficiency

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preparation example Construction

[0029] For a kind of LED epitaxial wafer preparation method that improves luminous efficiency of the present invention, its concrete steps comprise:

[0030] A, epitaxially growing a buffer layer on a sapphire substrate;

[0031] B. epitaxially growing an n-type gallium nitride layer on the buffer layer;

[0032] C. Epitaxial growth of multiple quantum well layers on the n-type gallium nitride layer;

[0033] D. Epitaxially grow at least two isolation layers from bottom to top on the multi-quantum well layer; wherein, the growth temperature of the at least two isolation layers is gradually increased according to the epitaxial growth sequence of the at least two isolation layers from first to last Big;

[0034] E. Epitaxially growing a p-type gallium nitride layer on the last epitaxially grown isolation layer. For example, the number of layers of the epitaxially grown isolation layer is 4, that is, the first isolation layer, the second isolation layer, the third isolation la...

specific Embodiment

[0049] The specific steps of a method for preparing LED epitaxial wafers that improve invention efficiency include:

[0050] S1, on the sapphire substrate (Al 2 o 3 ) on the sapphire substrate (Al 2 o 3 ) for nitriding treatment on the surface;

[0051] S2. Using a two-step growth method on a sapphire substrate (Al 2 o 3 ) epitaxial growth buffer layer (GaN);

[0052] The step S2 specifically includes: first low-temperature nucleation, and then high-temperature epitaxial growth of a rough layer (1020°C consistent with the annealing temperature) and a recovery layer (1065°C);

[0053] S3. Epitaxial growth of an n-type layer (GaN:Si) on the buffer layer (GaN), that is, an n-type gallium nitride layer doped with Si; wherein, the growth temperature of the n-type layer (GaN:Si) is 1050°C , the growth rate is controlled to be 2.6 μm / h, and the thickness is 2.6 μm to 2.7 μm;

[0054] S4. Epitaxially growing multiple quantum well layers (InGaN / GaN) on the above n-type layer (GaN...

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Abstract

The invention discloses an LED epitaxial wafer preparation method improving luminous efficiency, and the method comprises the steps: carrying out the epitaxial growth of a buffering layer on a sapphire substrate; carrying out the epitaxial growth of an n-type gallium nitride layer on the buffering layer; carrying out the epitaxial growth of a multi-quantum-well layer on the n-type gallium nitride layer; sequentially carrying out the epitaxial growth of at least two isolating layers on the multi-quantum-well layer, wherein the growth temperatures of the isolating layers gradually increase according to the epitaxial growth sequence of the isolating layers; and carrying out the epitaxial growth of a p-type gallium nitride layer on the final epitaxial growth isolating layers. The method provided by the invention can greatly improve the luminous efficiency of an LED, and also can achieve the purposes of simple technological steps and low cost. The method provided by the invention can be widely used in the field of LEDs.

Description

technical field [0001] The invention relates to a process for preparing LED epitaxial wafers, in particular to a method for preparing LED epitaxial wafers that improves luminous efficiency. Background technique [0002] LED (Light Emitting Diode, light-emitting diode) is gradually replacing traditional lighting sources due to its advantages of long life, low energy consumption, and high light efficiency, and is more and more widely used in the field of lighting. For LED lamps to replace traditional incandescent lamps and fluorescent lamps, the key lies in improving luminous efficiency and reducing costs. The improvement of epitaxy technology is the key to promoting the improvement of luminous efficiency and cost reduction of LED lighting applications, so this promotes the research of high luminous efficiency LED epitaxy. [0003] At present, the main ways to improve the quantum efficiency of LEDs include: the application of substrates with relatively matched lattices, the g...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
CPCH01L33/007
Inventor 何苗黄波陈雪芳刘翠郑树文李述体
Owner 株洲雨轩科技有限公司
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