GaN-based light-emitting diode epitaxial wafer and manufacturing method thereof

Abstract

The invention discloses a gallium nitride-based light emitting diode epitaxial wafer and a manufacturing method thereof, belonging to the field of semiconductor technology. An epitaxial wafer comprises a substrate, a buffer layer, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, a buffer layer, an N-type semiconductor layer, an active layer and a P-type semiconductor layer which are laminated on the substrate in this order; The active layer comprises a plurality of quantum wells and a plurality of quantum barriers, wherein the plurality of quantum wells and theplurality of quantum barriers are alternately stacked; The quantum barrier comprises M undoped scandium aluminum nitride layers and (M+1) undoped gallium nitride layers, wherein M scandium aluminum nitride layers and (M+1) gallium nitride layers are alternately stacked, and M is a positive integer. At least one undoped scandium-aluminum nitride layer is inserted into the undoped gallium nitride layer as a quantum barrier, and the scandium-aluminum nitride layer and the gallium nitride layer cooperate to alleviate the stress and defects caused by the lattice mismatch between the sapphire and the gallium nitride, thereby improving the internal quantum efficiency of the LED and further improving the luminous efficiency of the LED.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride-based light emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, LED for short) is a semiconductor electronic component that can emit light. LED has the advantages of energy saving, environmental protection, high reliability and long service life, so it has received widespread attention. [0003] Gallium nitride (GaN) has good thermal conductivity, high temperature resistance, acid and alkali resistance, high hardness and other excellent characteristics, so that gallium nitride (GaN)-based LEDs have received more and more attention and research. The existing gallium nitride-based LED epitaxial wafer includes a substrate, a buffer layer, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, and the buffer layer, the N-type semiconduc...

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Problems solved by technology

[0006] The embodiment of the present invention provides a gallium nitride-based light-emitting diode epitaxial wafer and its manufacturing method, which can solve the stress and defects caused by lattice mismatch between sapphire and gallium nitride in the prior art and extend to the active layer to reduce the LED The problem of luminous efficiency

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