Method for planting high-purity Ni/Cu double-layer target membrane on high borosilicate glass

A high-borosilicate glass, high-purity technology, used in coating, sputtering, ion implantation, etc., can solve the problems of electroplating that cannot guarantee the purity of the coating, poor adhesion, easy peeling and peeling, etc. The effect of strong bonding force, solving poor bonding force and controllable thickness

Active Publication Date: 2018-08-28
CHINA INSTITUTE OF ATOMIC ENERGY
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AI Technical Summary

Problems solved by technology

On the one hand, the electroplating method cannot be used to prepare such a film, because the high borosilicate glass substrate material is non-conductive and the electroplating method cannot guarantee the purity of the coating film; When the Ni film of about 1 μm is coated with a thicker copper film on the Ni film substrate, the bonding force is too poor, and it is easy to peel off

Method used

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Embodiment Construction

[0026] The present invention will be further described below in conjunction with specific experimental examples.

[0027] A method for coating high-purity Ni / Cu double-layer target film on borosilicate glass, the method is to use metal vapor vacuum arc ion source (MEVVA)-filtered cathode vacuum arc (FCVA)-resistance heating vacuum evaporation (RHVE) combined equipment carries out the plating system of this double-layer target film, and this method comprises the following several steps:

[0028] (1) Plating of Ni transition layer

[0029] ①Using metal vapor vacuum arc ion source to implant Ni ions, wherein the injection high voltage is 8-10KV, the injection beam is 4-6mA, and the injection is 1000mC;

[0030] ②Use a single 90-degree filtered cathode vacuum arc for Ni deposition, where the arc current is set to 80-120A, no bias voltage, and the deposition time is 3-4 seconds;

[0031] ③Implant Ni ions with a metal vapor vacuum arc ion source, inject high voltage 8-10KV, inject...

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Abstract

The invention belongs to the technical field of preparation of a nuclear target and discloses a method for planting a high-purity Ni/Cu double-layer target membrane on high borosilicate glass. According to the method, the double-layer target membrane is plated by utilizing metal steam vacuum arc ion source-filtering cathode vacuum arc-resistance heating vacuum evaporation combined equipment. The Ni/Cu double-layer target membrane with high plating layer uniformity, strong binding force and controllable thickness can be prepared successfully by the method provided by the invention, and the problems that the Ni membrane of 1 [mu]m is prepared by the traditional method as well as the thick Cu membrane has bad binding force and is liable to peel off are solved.

Description

technical field [0001] The invention belongs to the technical field of nuclear target preparation, and in particular relates to a method for plating a high-purity Ni / Cu double-layer target film on high borosilicate glass. Background technique [0002] Coating methods include chemical vapor deposition, vacuum evaporation, electroplating, and magnetron sputtering. At present, in nuclear physics experiments, it is necessary to prepare a Ni / Cu double-layer target film with high borosilicate glass as the substrate. The thickness of the Ni film is required to be about 1 μm, the thickness of the Cu film is greater than 10 μm, and the purity of Ni and Cu are both 99.999. %above. The method of this type of coating has not yet been reported. On the one hand, the electroplating method cannot be used to prepare such a film, because the high borosilicate glass substrate material is non-conductive and the electroplating method cannot guarantee the purity of the coating film; When the N...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/02C23C14/18C23C14/26C23C14/32
CPCC23C14/025C23C14/18C23C14/26C23C14/325
Inventor 樊启文王华胡跃明孟波张榕
Owner CHINA INSTITUTE OF ATOMIC ENERGY
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