An Out-of-Band Selectively Tunable Millimeter Wave Filter

Abstract

The present invention discloses a millimeter wave filter with adjustable out-of-band selectivity. The millimeter wave filter comprises a silicon cavity resonance unit 5, a silicon cavity resonance unit 6 and a selectivity adjustable unit 7. The silicon cavity resonance unit 5 and the silicon cavity resonance unit 6 are respectively formed by array arrangement of deep silicon etching through holes501 and 601 penetrating an upper metal layer 1, a high-resistance silicon dielectric layer 2 and a bottom metal layer 3, the selectivity adjustable unit 7 is formed by a half-wavelength defect ring resonance unit 701 and a half-wavelength defect ring resonance unit 702 which are etched on the bottom metal layer 3 and shallow silicon etching through holes 703 penetrating part of the high-resistancesilicon dielectric layer 2 and the bottom metal layer 3, the selectivity adjustable unit 7 employs a circuit structure, a through hole layout and a process layer design to allow high-frequency and low-frequency out-of-band rejection of the millimeter wave filter to be respectively adjustable without mutual influence, and the millimeter wave filter is subjected to 90-degree rotation to widen the bandwidth of the millimeter wave filter to increase the high-frequency out-of-band rejection and allow the millimeter wave filter to have good adjustable out-of-band rejection.

Description

technical field [0001] The invention relates to the intersection fields of microwave and millimeter-wave circuits, microelectronics and micro-electromechanical systems, in particular to an out-of-band selectivity adjustable millimeter-wave filter. Background technique [0002] Filters play an important role in frequency-selective filtering in RF / microwave systems. The main performance indicators include loss, bandwidth, out-of-band selectivity, and circuit size. As frequency resources become increasingly tight, out-of-band selectivity (steepness) becomes a key design difficulty. Traditional cavity and LC filters are bulky, expensive to manufacture and not easy to integrate with multi-chip interconnects. [0003] The silicon-based filter realized by silicon microelectromechanical system technology has the obvious advantages of high Q value, low dropout loss and small volume in the millimeter wave frequency band, and can be compatible with the conventional monolithic microwav...

AI Technical Summary

Problems solved by technology

Traditional cavity and LC filters are bulky, expensive to manufacture, and difficult to integrate with multi-chip interconnects.

Images