Active clamp voltage stress suppression circuit, method and drive circuit for power switch

A power switch and stress suppression technology, which is applied in the field of drive circuits and active clamp voltage stress suppression circuits, can solve the problems of current loss and affect the service life of active clamp effect TVS, so as to reduce heat loss and improve utilization rate, improve the effect of the clamping effect

Active Publication Date: 2020-05-26
SUZHOU INOSA UNITED POWER SYST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] It can be seen from the above that due to the bypass effect of the drive circuit in the prior art, the current injected into the gate of the IGBT by TVS reverse breakdown is lost, which greatly affects the effect of active clamping and the service life of TVS

Method used

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  • Active clamp voltage stress suppression circuit, method and drive circuit for power switch
  • Active clamp voltage stress suppression circuit, method and drive circuit for power switch
  • Active clamp voltage stress suppression circuit, method and drive circuit for power switch

Examples

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Effect test

Embodiment 1

[0046] reference figure 1 An active clamp circuit 101 is connected between the input terminal and the control terminal of the power switch, and the power switch is not limited to IGBT, MOSFET, etc. For example, taking the IGBT as an example in this embodiment, the active clamping circuit 101 is connected between the collector and the gate of the IGBT. The active clamp voltage stress suppression circuit of the power switch of the present invention includes:

[0047] The detection module 102 is used to detect whether the power switch triggers an active clamp;

[0048] The execution module 103 is arranged in the drive path of the power switch, and is used to cut off the drive path when the detection module 102 detects that the active clamp is triggered.

[0049] It is understandable that when the active clamp is triggered, current will be injected into the power switch, so it is possible to determine whether the active clamp is triggered by detecting the magnitude of the current. In a...

Embodiment 2

[0054] reference image 3 In this embodiment, the active clamp voltage stress suppression circuit of the power switch includes: a detection module 202 and an execution module 203. The detection module 202 includes a current detection unit and a comparison unit, and the execution module 203 includes a turn-off control switch, and the turn-off control switch is arranged in the current driving path of the power switch. The active clamp circuit 201 includes a unidirectional TVS tube D1 and a bidirectional TVS tube D2, and the power switch is an IGBT. Specifically:

[0055] The current detection unit is connected between the bidirectional TVS tube D2 in the active clamp circuit 201 and the gate G of the power switch, and is used to detect the output of the active clamp circuit 201 to the control terminal of the power switch That is, the current of the gate G, and the corresponding detection voltage is generated, and the current detection unit can be implemented by using a current samp...

Embodiment 3

[0061] reference Figure 4 , The power switch is an IGBT. In this embodiment, the suppression circuit includes: a detection module 302 and an execution module 303. The active clamping circuit 301 includes a unidirectional TVS tube D1, a bidirectional TVS tube D2, and a diode D3. The detection module 302 includes current sampling resistor R1, voltage divider resistors R2 and R3, comparator A1, analog-to-digital converter C1, and execution module 303 includes AND gate C2, digital-to-analog converter A3, turn-off control switch K2, and power switch drive The path includes a logic processing unit, a digital-to-analog converter A2, and a conduction control switch K1 that controls the conduction of the power switch.

[0062] Wherein, the first end of the bidirectional TVS tube D2 is connected to the anode of the diode D3, the cathode of the diode D3 is connected to the control end of the power switch, and the second end of the bidirectional TVS tube is connected to the anode of the un...

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Abstract

Disclosed in the present invention are an active clamp voltage stress suppression circuit, method and driving circuit for a power switch, wherein an active clamp circuit is connected between an input terminal and control terminal of a power switch, and a suppression circuit comprises: a detection module that is used for detecting whether the power switch triggers an active clamp; an execution module that is disposed in a driving path of the power switch, and that is used for cutting off the driving path when the detection module detects that the active clamp is triggered. The present invention detects whether the power switch triggers the active clamp, and cuts off a current driving path of the power switch when the detection module detects that the active clamp is triggered, thereby eliminating the bypass effect of the driving path on current of an active clamp injection power switch, and improving the utilization rate of reverse breakdown current of the active clamp circuit. Thus, the clamping effect of the active clamp is improved, heat loss of a transient voltage suppressor (TVS) in the active clamp circuit is reduced, heat loss of the driving circuit is reduced, and the reliability of the active clamp circuit is improved.

Description

Technical field [0001] The invention relates to the field of motor control, in particular to an active clamp voltage stress suppression circuit, method and drive circuit of a power switch. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) is a common power switching device, which is often used in high-voltage and high-current conditions. During the IGBT turn-off process, the induced electromotive force generated on the loop stray inductance is superimposed on the bus voltage, causing a large voltage stress between the collector and emitter of the IGBT. Active clamping technology detects the voltage between the collector and emitter of the IGBT through TVS (Transient Voltage Suppressor, also known as transient suppression diode). When the voltage exceeds the breakdown voltage of the TVS, the TVS is reversely broken down, resulting in The breakdown current flows to the gate of the IGBT, which can slow down the decline of the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K17/082H03K17/567
CPCH03K17/0828H03K17/567H03K2217/0027H03K2217/0036H03K2217/0081H03K17/166
Inventor 徐涛涛梅佳胜朱铁影
Owner SUZHOU INOSA UNITED POWER SYST CO LTD
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