Active clamp voltage stress suppression circuit, method and drive circuit for power switch
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SUZHOU INOSA UNITED POWER SYST CO LTD
- Publication Date
- 2020-05-26
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Abstract
Description
Technical field
[0001] The invention relates to the field of motor control, in particular to an active clamp voltage stress suppression circuit, method and drive circuit of a power switch. Background technique
[0002] IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) is a common power switching device, which is often used in high-voltage and high-current conditions. During the IGBT turn-off process, the induced electromotive force generated on the loop stray inductance is superimposed on the bus voltage, causing a large voltage stress between the collector and emitter of the IGBT. Active clamping technology detects the voltage between the collector and emitter of the IGBT through TVS (Transient Voltage Suppressor, also known as transient suppression diode). When the voltage exceeds the breakdown voltage of the TVS, the TVS is reversely broken down, resulting in The breakdown current flows to the gate of the IGBT, which can slow down the decline of the ...