Method for adjusting the resistivity of a semi-conductive ingot during the production thereof
A semiconductor and crystal ingot technology, applied in the field of axial resistivity manufacturing, can solve the problems of high cost and long time, and achieve the effect of fast cost
Active Publication Date: 2018-09-04
COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
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- Application Information
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Problems solved by technology
However, since the cutting step and the annealing step must be completed for each ingot, it takes a long time and costs a lot
Method used
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[0037] figure 1 is a block diagram representing the different steps S1 to S7 of a method enabling the manufacture of an ingot of semiconductor material having a specific axial resistivity distribution. The semiconductor material of the boule is silicon, for example.
[0038] During a first step S1 , a first silicon ingot, hereinafter referred to as a reference ingot, is crystallized from a silicon melt. This melt, which also contains oxygen, is obtained by melting a charge of silicon in a crucible. Oxygen can originate from the crucible, customarily formed from quartz or silicon dioxide, as it is partially dissolved under the action of temperature and / or silicon charge (ie silicon in the solid state).
[0039] In addition to oxygen, the silicon melt may contain dopants such as boron and / or phosphorus. These dopants are introduced into the melt in the form of heavily doped silicon powder or wafers, before the ingot is pulled, or are initially included in the charge. After c...
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The invention relates to a method for manufacturing ingots made of a semi-conductive material, including the following steps: crystallising under specific draft conditions a first ingot, referred to as the reference ingot, from a first molten load containing oxygen; measuring the interstitial oxygen concentration in various regions distributed along the reference ingot; measuring, in the various regions of the reference ingot, the concentration of thermal donors formed during the crystallisation of the reference ingot; determining the actual durations of an annealing process for forming the thermal donors, undergone by the various regions of the reference ingot during the crystallisation thereof, from the measurements of the interstitial oxygen concentration and the concentration of thermal donors; calculating the thermal donor concentration values to be obtained so that a second ingot has, after crystallisation, an axial electric resistivity according to a target profile; determiningan axial profile of interstitial oxygen concentration corresponding to the target axial resistivity profile, from the thermal donor concentration values and the actual durations of the annealing process for forming the thermal donors; crystallising under said specific draft conditions the second ingot from a second molten load containing oxygen, the oxygen concentration of the second molten load being adjusted throughout the crystallisation so as to obtain, in the second ingot, the axial profile of interstitial oxygen concentration.
Description
technical field [0001] The present invention relates to a method of manufacturing an ingot from semiconductor material. In particular it relates to a manufacturing method capable of adjusting the axial resistivity of the ingot. Background technique [0002] The Czochralski method is a technique commonly used to form single crystal silicon ingots. It involves melting a quantity of silicon called a charge or mass in a crucible and crystallizing the silicon from a single crystal seed. A seed crystal oriented with the crystal axis of the crystal to be formed is first dipped into a silicon melt. Then rotate and pull upward slowly. Thus, the solid silicon ingot grows gradually by being fed from the melt. [0003] Silicon is often doped to adjust its resistivity. Dopants such as boron and phosphorus are incorporated into the molten charge prior to crystallization or into the charge prior to the melting step. [0004] With the Czochralski stretching method, dopants tend to acc...
Claims
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Login to View More IPC IPC(8): C30B29/06C30B15/04C30B15/20
CPCC30B15/04C30B15/206C30B29/06
Inventor 乔迪·韦尔曼迈克尔·阿尔巴里克塞巴斯蒂安·杜波伊斯杰基·斯塔德勒马蒂厄·托马西尼
Owner COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES