Method for manufacturing light emitting diode chip and light emitting diode chip
A technology of light-emitting diodes and manufacturing methods, applied to the manufacture of light-emitting diode chips and the field of light-emitting diode chips, capable of solving problems such as inability to obtain sufficient brightness, and achieving the effect of improving brightness
Inactive Publication Date: 2018-09-14
DISCO CORP
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Problems solved by technology
[0006] However, in the light-emitting diode disclosed in Patent Document 1, there is a problem that although the luminance is slightly improved by affixing a transparent member to the back surface of the substrate, sufficient luminance cannot be obtained.
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[0024] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. refer to figure 1 , shows a front perspective view of an optical device wafer (hereinafter, sometimes simply referred to as a wafer) 11 .
[0025] The optical device wafer 11 is formed by laminating an epitaxial layer (laminate layer) 15 such as gallium nitride (GaN) on a sapphire substrate 13 . The optical device wafer 11 has a front surface 11 a on which the epitaxial layer 15 is laminated and a back surface 11 b exposed from the sapphire substrate 13 .
[0026] Here, in the optical device wafer 11 of the present embodiment, the sapphire substrate 13 is used as the crystal growth substrate, but a GaN substrate, a SiC substrate, or the like may be used instead of the sapphire substrate 13 .
[0027] The stacked body layer (epitaxial layer) 15 is formed by making electrons a majority carrier of the n-type semiconductor layer (for example, an n-type GaN layer),...
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The invention provides a method for manufacturing a light emitting diode (LED) chip and a light emitting diode (LED) chip. The method comprises following steps: wafer preparation, preparing a wafer: alaminate layer is arranged on a transparent substrate for growing a wafer, LED circuits are formed in areas, which are formed by cutting the front surface of the laminate layer by a plurality presetcutting lines, which are intersected with each other, and the laminate layer comprises a plurality of semiconductor layers including a luminous layer; processing the transparent substrate: forming a plurality of pits corresponding to the LED circuits in the back surface or front surface of any one of first or second transparent substrate with a plurality of through holes in the whole surface; adhering transparent substrates: adhering the front surface of the first transparent substrate onto the back surface of the wafer, and adhering the front surface of the second transparent substrate onto the back surface of the first transparent substrate so as to form an integrated wafer; and cutting: cutting the wafer, the first transparent substrate, and the second transparent substrate along predetermined cutting lines so as to divided the integrated wafer into different LED chips.
Description
technical field [0001] The invention relates to a method for manufacturing a light emitting diode chip and the light emitting diode chip. Background technique [0002] On the front surface of a crystal growth substrate such as a sapphire substrate, a GaN substrate, or a SiC substrate, a laminated body layer is formed by laminating an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer. A wafer in which a plurality of light-emitting devices such as LEDs (Light Emitting Diode: Light Emitting Diode) is formed in a region divided by a plurality of intersecting planned dividing lines on the laminate layer is cut along the planned dividing lines and divided into individual light-emitting device chips, and divided into The light-emitting device chips are widely used in various electronic devices such as mobile phones, personal computers, and lighting equipment. [0003] Since the light emitted from the light-emitting layer of the light-emitting dev...
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IPC IPC(8): H01L33/58H01L33/48
CPCH01L33/483H01L33/58H01L2933/0033H01L2933/0058H01L33/005H01L21/76H01L21/78H01L33/20
Inventor 冈村卓北村宏
Owner DISCO CORP