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Method for preparing flower-like ternary metal oxide semiconductor ZnSnO3

A technology of oxide semiconductor and zinc metastannate, which is applied in chemical instruments and methods, tin compounds, inorganic chemistry, etc., can solve the problems of poor response recovery selectivity and high working temperature of gas-sensing performance, and achieve easy operation and large product volume , the effect of large specific surface area

Inactive Publication Date: 2018-09-18
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these materials still have some disadvantages in the application of gas sensor, such as high operating temperature, gas sensing performance such as sensitivity, response recovery time and poor selectivity, etc.

Method used

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  • Method for preparing flower-like ternary metal oxide semiconductor ZnSnO3
  • Method for preparing flower-like ternary metal oxide semiconductor ZnSnO3
  • Method for preparing flower-like ternary metal oxide semiconductor ZnSnO3

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] (1) Weigh SnCl 4 ·5H 2 O was dissolved in absolute ethanol to make 10 mL of SnCl by magnetic stirring 4 Anhydrous ethanol solution (0.2M);

[0025] (2) Weigh ZnSO 4 ·7H 2 O was dissolved in deionized water, dropped into triethanolamine (TEOA) and stirred evenly to form 20 mL of ZnSnO 4 (0.1M) and TEOA (20wt%) in water;

[0026] (3) Add the solution of step (1) into the solution of step (2), and continue stirring for 15 minutes;

[0027] (4) Configure 50mL NaOH aqueous solution (0.4M), add dropwise to the mixed solution being stirred in step (3), the pH value of the solution is 11, continue to stir for 15min, then let it stand for 6h, and a solid flower-like precipitate appears;

[0028] (5) Collect the precipitate obtained from the reaction in step (4), wash it with deionized water and absolute ethanol respectively, and dry it at room temperature to obtain a solid flower-like structure of ZnSn(OH) 6 Precursor powder;

[0029] (6) ZnSn(OH) obtained in step (5) 6...

Embodiment 2

[0032] (1) Weigh SnCl 4 ·5H 2 O was dissolved in absolute ethanol to make 10 mL of SnCl by magnetic stirring 4 Anhydrous ethanol solution (0.2M);

[0033] (2) Weigh ZnSO 4 ·7H 2 O was dissolved in deionized water, dropped into triethanolamine (TEOA) and stirred evenly to form 20 mL of ZnSnO 4 (0.1M) and TEOA (20wt%) in water;

[0034] (3) Add the solution of step (1) into the solution of step (2), and continue stirring for 15 minutes;

[0035](4) Configure 50mL of 0.4M NaOH aqueous solution, add dropwise to the mixed solution being stirred in step (3), the pH value of the solution is 11, continue to stir for 15min, and then stand for 6h, and a solid precipitate is obtained at this time; on the basis of , add dropwise 40mL of 2M NaOH aqueous solution while stirring, the pH value of the solution is 12, after the dropwise addition is completed, continue to stir for 15min, and then let it stand for 6h, at this time, a hollow flower-like precipitate is obtained;

[0036] (5)...

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PUM

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Abstract

The invention discloses a method for preparing a flower-like ternary metal oxide semiconductor ZnSnO3, and the method is as follows: adding an ethanol solution A of SnCl4 (0.2M) into a deionized watersolution B of ZnSO4 (0.1M) and triethanolamine (10-30% by weight) (wherein the molar ratio of SnCl4 to ZnSO4 is 1:1), and stirring continuously; adding a 0.4M NaOH solution dropwise to an A and B mixed solution according to a volume ratio of 5:3, continuing stirring, standing for 6 hours to produce a solid flower-like precipitate of ZnSn(OH)6; or on the basis of the solution, adding a 2M NaOH solution (pH=10-12) dropwise while stirring, continuing stirring, standing for 6 hours to produce a hollow flower-like precipitate of ZnSn(OH)6 when the molar ratio of NaOH to ZnSn (OH) 6 is 40:1; separately cleaning and drying the hollow flower-like precipitate or the solid flower-like precipitate to obtain corresponding ZnSn(OH)6 powder, and calcining the powder at 500 DEG C for 2 h to obtain a micron-scale solid or hollow flower-like structure ZnSnO3. The method is simple, and the product is large in quantity and uniform in distribution, and has a large specific surface area.

Description

technical field [0001] The present invention relates to a kind of gas sensitive material, specifically, relate to a kind of zinc metastannate (ZnSnO 3 )Methods. Background technique [0002] Human life is closely related to the surrounding atmosphere and environment. The widespread use of flammable gases (such as gas, natural gas, liquefied petroleum gas, etc.) brings us great convenience and seriously affects the ecological environment, and is prone to explosions, fires, Accidents such as poisoning seriously threaten people's health and safety. Therefore, effective monitoring of combustible gases becomes extremely important. These problems can be monitored and warned by gas sensors. Gas sensors are of great significance in people's lives, and various gas-sensitive materials used in gas sensors have also attracted extensive attention. [0003] Metal oxide semiconductors are considered to be gas-sensing materials with broad application prospects due to their advantages suc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G19/00
CPCC01G19/00C01P2002/72C01P2004/03C01P2004/30C01P2004/32C01P2004/61
Inventor 王秀宇丁伯楠刘颜鹏夏梦真李亨朱宣同傅惠
Owner TIANJIN UNIV
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