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Zinc oxide piezoresistor ceramic with high voltage gradient, low residual voltage and low leakage current and preparation method thereof

A leakage current and varistor technology, applied in the field of materials, can solve problems such as ZnO varistor valve plates that have not yet been realized, and achieve the effects of improving aging stability, suppressing leakage current, and reducing grain resistance.

Inactive Publication Date: 2018-09-18
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the existing disclosed formulas and processes have been able to prepare ZnO varistor valves with high voltage gradient or low residual voltage, for example: a high potential gradient ZnO-based varistor ceramic material and its preparation method (patent number: 201310262113.4), a A low-temperature sintering method for high potential gradient varistor ceramic materials (patent number: 201310021167.1), but the combination of different formulations and processes will lead to unpredictable performance changes, so it has not yet been realized to have high voltage gradient, low residual voltage, and aging performance at the same time Excellent ZnO varistor valve

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] 1) Raw material preparation

[0023] The low residual voltage ZnO varistor ceramic material is in the following ratio ZnO (90.5mol%), Bi 2 o 3 (1.5mol%), Sb 2 o 3 (1mol%), MnO 2 (1mol%), Cr 2 o 3 (1mol%), Co 2 o 3 (1mol%), SiO 2 (1.5mol%), Al(NO 3 ) 3 (1mol%), In(NO 3 ) 3 (0.5mol%) and Y(NO 3 ) 3 (1mol%) to prepare starting materials.

[0024] 2) Preparation of auxiliary addition slurry

[0025] Bi 2 o 3 (1.5mol%), Sb 2 o 3 (1mol%), MnO 2 (1mol%), Cr 2 o 3 (1mol%), Co 2 o 3 (1mol%) and SiO 2 (1.5mol%) was put into the sanding jar of horizontal sand mill, added the deionized water of 1.5 times of powder weight, and sanded for 2 hours.

[0026] 3) Mix the auxiliary additive slurry with ZnO

[0027]Add 90.5% mol of ZnO to the auxiliary slurry after sand milling, add deionized water 1 times the weight of the powder, and mix and sand all the mixed materials for 1 hour until they are uniformly dispersed.

[0028] 4) Add aluminum, indium and yttrium...

Embodiment 2

[0042] 1) Raw material preparation

[0043] The low residual voltage ZnO varistor ceramic material is in the following ratio ZnO (95.3mol%), Bi 2 o 3 (0.5mol%), Sb 2 o 3 (0.5mol%), MnO 2 (0.5mol%), Cr 2 o 3 (0.5mol%), Co 2 o 3 (0.5mol%), SiO 2 (1mol%), Al(NO 3 ) 3 (0.6mol%), In(NO 3 ) 3 (0.1mol%) and Y 2 o 3 (0.5 mol%) to prepare starting materials.

[0044] 2) Preparation of auxiliary addition slurry

[0045] Bi 2 o 3 (0.5mol%), Sb 2 o 3 (0.5mol%), MnO 2 (0.5mol%), Cr 2 o 3 (0.5mol%), Co 2 o 3 (0.5mol%), SiO 2 (1mol%) was put into the sanding jar of horizontal sand mill, added the deionized water of 1 times of powder weight, sanded for 2 hours.

[0046] 3) Mix the auxiliary additive slurry with ZnO

[0047] Add 95.3% mol of ZnO to the auxiliary slurry after sand milling, add deionized water 1.5 times the weight of the powder, and mix and sand all the mixed materials for 1 hour until they are uniformly dispersed.

[0048] 4) Add aluminum, indium and...

Embodiment 3

[0062] 1) Raw material preparation

[0063] The low residual voltage ZnO varistor ceramic material is in the following ratio ZnO (87.5mol%), Bi 2 o 3 (2mol%), Sb 2 o 3 (1.5mol%), MnO 2 (1mol%), Cr 2 o 3 (1mol%), Co 2 o 3 (1.5mol%), SiO 2 (2mol%), Al(NO 3 ) 3 (1mol%), In(NO 3 ) 3 (1mol%) and Y(NO 3 ) 3 (1.5 mol%) to prepare the starting material.

[0064] 2) Preparation of sanding auxiliary additives

[0065] Bi 2 o 3 (2mol%), Sb 2 o 3 (1.5mol%), MnO 2 (1mol%), Cr 2 o 3 (1mol%), Co 2 o 3 (1.5mol%) and SiO 2 (2mol%) was put into the sanding jar of horizontal sand mill, added the deionized water of 1.5 times of powder weight, and sanded for 2 hours.

[0066] 3) Mix the auxiliary additive slurry with ZnO

[0067] Add 87.5% mol of ZnO to the auxiliary slurry after sand milling, add deionized water 0.5 times the weight of the powder, and mix and sand all the mixed materials for 1 hour until they are evenly dispersed.

[0068] 4) Add aluminum, indium and y...

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Abstract

The invention relates to a zinc oxide piezoresistor ceramic with high voltage gradient, low residual voltage and low leakage current and a preparation method thereof, and belongs to the technical field of piezoresistor material preparation. The method comprises the following preparation steps: mixing Bi2O3, Sb2O3, MnO2, Cr2O3, Co2O3 and SiO2, and adding deionized water for grinding; adding ZnO anddeionized water into the ground slurry, and grinding again; adding Al(NO3)3, In(NO3)3, Y(NO3)3 or Y2O3 into the ground ZnO slurry, and grinding again; tabletting and sintering the ground slurry The resistor ceramic prepared by the method has the characteristics of small leakage current, high gradient, low residual voltage, large current capacity and stable aging performance, and can better meet the application demand on overvoltage of transmission line arresters, GIS (Gas Insulated Switchgear) arresters and deeply-limited power systems.

Description

technical field [0001] The invention belongs to the field of materials, in particular to a zinc oxide varistor ceramic with high voltage gradient, low residual voltage and low leakage current and a preparation method thereof. Background technique [0002] Zinc oxide varistors use ZnO as the main raw material, adding a small amount of Bi 2 o 3 , Sb 2 o 3 , MnO 2 、Cr 2 o 3 、Co 2 o 3 etc. as auxiliary components, prepared by ceramic sintering process. Due to its excellent nonlinear volt-ampere characteristics and energy absorption capacity, metal oxide arresters based on zinc oxide varistors have become key equipment for overvoltage protection in modern power systems. played a vital role. At the same time, the overvoltage protection level of the arrester directly determines the insulation level of the power transmission and transformation equipment. [0003] Generally, the voltage of the varistor under the action of 1mA DC current is called the varistor voltage U 1m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/453C04B35/622
CPCC04B35/453C04B35/622C04B2235/3217C04B2235/3225C04B2235/3244C04B2235/3267C04B2235/3275C04B2235/3286C04B2235/3294C04B2235/3298C04B2235/3418C04B2235/443C04B2235/6562C04B2235/6567C04B2235/96
Inventor 何金良胡军王晓强赵锐孟鹏飞王忠冯利伟
Owner TSINGHUA UNIV
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