Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Bi2Te3 material with three dimensional nanostructure, and preparation method and applications thereof

A technology of three-dimensional nanometer and nanosheet, which is applied in the direction of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc. It can solve the problems of limited application, narrow adjustable range of electromagnetic parameters, etc., and achieve excellent absorbing performance , low cost, strong reflection loss effect

Inactive Publication Date: 2018-09-28
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

To sum up, as a wave-absorbing material, ferrite material exhibits good electromagnetic wave absorption performance, but due to its very narrow adjustable range of electromagnetic parameters, and more importantly, its relatively high density greatly limits Its application, especially on today's aircraft with high flight performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Bi2Te3 material with three dimensional nanostructure, and preparation method and applications thereof
  • Bi2Te3 material with three dimensional nanostructure, and preparation method and applications thereof
  • Bi2Te3 material with three dimensional nanostructure, and preparation method and applications thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Bi of the present invention has three-dimensional nanostructure 2 Te 3 material, the Bi 2 Te 3 The material has a three-dimensional nanostructure, and the three-dimensional nanostructure is a three-dimensional structure formed by interpenetrating nanosheets; the Bi 2 Te 3 The material is prepared as follows:

[0025] Step 1, add 1.2g of potassium hydroxide and 0.9702g of bismuth nitrate pentahydrate to 60mL of ethylene glycol, stir until the materials are completely dissolved, and obtain reaction solution A; add 0.3828g of tellurium powder and 4.0g of 1-butyl to reaction solution A Base-3-methylimidazolium bromide, mixed and stirred to obtain reaction solution B after two hours;

[0026] Step 2, put the reaction solution B of step 1 into a 100mL reactor, carry out the hydrothermal synthesis reaction at 160°C, and keep it warm for 6 hours. After natural cooling, the obtained product is subjected to centrifugal washing and drying to obtain Bi 2 Te 3 Material.

[0...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a Bi2Te3 material with a three dimensional nanostructure. The three dimensional nanostructure is formed through mutual interpenetration of Bi2Te3 nanometer sheets. The invention also discloses a preparation method of the Bi2Te3 material with a three dimensional nanostructure, and applications of the Bi2Te3 material with a three dimensional nanostructure in preparation of electromagnetic wave absorbing materials. The Bi2Te3 material possesses high reflection loss and wide effective absorption frequency band even when the thickness is low, and possesses excellent wave absorption performance. According to the preparation method, hydrothermal method is adopted to prepare the Bi2Te3 material with a three dimensional nanostructure. The preparation method is simple; cost is low; no complex synthetic equipment is needed; and large scale batch production can be realized.

Description

technical field [0001] The present invention relates to a kind of Bi with three-dimensional nanostructure 2 Te 3 material, also involving the above Bi 2 Te 3 The preparation method of the material and its application in preparing electromagnetic wave-absorbing materials belong to the technical field of wave-absorbing materials. Background technique [0002] With the rapid development of modern electronic information technology, the wide application of various electronic equipment has caused serious electromagnetic pollution to the environment. Electromagnetic pollution will not only negatively affect the normal physiological activities of human beings, but also interfere with the normal operation of precision electronic components. In addition, in the military field, anti-stealth radar technology is becoming more and more advanced, and aircrafts have put forward higher requirements for stealth coatings. For this reason, research on absorbing materials has received exten...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/04B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C01B19/007C01P2002/72C01P2004/03C01P2004/30C01P2004/64
Inventor 姬广斌陈家彬梁小会权斌
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com