Retreatment technology for defective wet process black silicon chip
A technology for reprocessing and defective products, applied in the direction of post-processing, post-processing details, final product manufacturing, etc.
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Embodiment 1
[0083] The defective product of the wet-process black silicon wafer of Example 1 was characterized by scanning electron microscopy to obtain figure 1 . by figure 1 It can be seen that there are small black spots on the surface of the defective wet-process black silicon wafer of Example 1.
[0084] It is judged that the texture structure of the defective wet-process black silicon wafer of Example 1 is qualified, and step A is adopted. Step A includes the following steps:
[0085] The defective wet-process black silicon wafers are sequentially subjected to alkaline washing, pure water rinsing and acid washing to remove the dirt on the surface of the defective wet-process black silicon wafers to obtain reprocessed wet-process black silicon wafers.
[0086] Among them, the alkaline washing operation is: washing with a KOH solution with a mass concentration of 1.0%, the washing temperature is 25°C, and the washing time is 30s.
[0087] Among them, the pure water rinsing time is 20s.
[008...
Embodiment 2
[0092] The defective product of the wet-process black silicon wafer of Example 2 was characterized by scanning electron microscopy to obtain image 3 . by image 3 It can be seen that there is a watermark on the surface of the defective wet-process black silicon wafer of Example 2.
[0093] It is judged that the texture structure of the defective wet black silicon wafer of Example 2 is qualified, and step A is adopted. Step A includes the following steps:
[0094] The defective wet-process black silicon wafers are sequentially subjected to alkaline washing, pure water rinsing and acid washing to remove the dirt on the surface of the defective wet-process black silicon wafers to obtain reprocessed wet-process black silicon wafers.
[0095] Among them, the alkaline washing operation is: cleaning with a NaOH solution with a mass concentration of 0.5%, the cleaning temperature is 25°C, and the cleaning time is 15s.
[0096] Among them, the pure water rinsing time is 30s.
[0097] Among th...
Embodiment 3
[0101] The defective product of the wet-process black silicon wafer of Example 3 was characterized by scanning electron microscopy to obtain Figure 5 . by Figure 5 It can be seen that the surface pores of the defective wet-process black silicon wafer of Example 3 are smaller than those of the normal suede surface, and the surface of the defective wet-process black silicon wafer of Example 3 has more deep holes, indicating its The reflectivity is low.
[0102] To determine that the suede structure of the defective wet black silicon wafer is unqualified, step B is adopted. Step B includes the following steps:
[0103] The defective wet-process black silicon wafers are sequentially subjected to alkali polishing, metal deposition, metal-induced catalysis, metal removal, hole expansion, alkali washing, and pickling to obtain re-processed wet-process black silicon wafers.
[0104] Among them, the operation of alkali polishing is: cleaning with a KOH solution with a mass concentration o...
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