A memory test system, method and storage medium

A memory test and memory technology, which is applied in the test of memory circuits in low-temperature environments, and in the field of test systems for memory circuits, can solve problems such as insufficient holding time and insufficient low-temperature test time, so as to improve test accuracy and solve direct test problems , testing a wide range of effects

Active Publication Date: 2020-10-16
BEIJING MXTRONICS CORP +1
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem solved by the present invention is: to overcome the problem of insufficient low-temperature test time in the existing test technology, and to provide a memory test system, method and storage medium. The system of the present invention can realize the high-coverage test of the FPGA configuration memory in a low-temperature environment, Solve the problem of insufficient holding time of automatic test equipment, improve the test accuracy and test efficiency of FPGA configuration memory circuits in low temperature tests

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A memory test system, method and storage medium
  • A memory test system, method and storage medium
  • A memory test system, method and storage medium

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0043] The entire test system framework is as follows figure 1 As shown, it consists of a host computer 101, a communication serial port 102, a system main control FPGA 103, a verification FPGA 104, a configuration memory 105, a JTAG port 106 and a memory to be tested 107108109. Wherein, the upper computer sends control commands to the main control FPGA 103 through the serial port 102 to operate the main control FPGA 103 . The main control FPGA controls the configuration, erasing and testing operations between the memory to be tested and the upper computer 101 and verification FPGA 104 according to the command requirements, and feeds back the memory test results to the upper computer 101 . Verify that the FPGA 104 configures it through the memory to be tested 107108109, and verify whether the function of the memory is normal through the configuration result. The configuration memory 105 is used to automatically configure the main control FPGA 103 in JTAG mode through the JTAG...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a test system and method for a memory, and a memory medium. The test system comprises a host computer, a configuration memory, a memory to be tested, a master FPGA and a verification FPGA. The host computer sends commands to the master FPGA to realize the selection, configuration and erasure operations of the memory to be tested. The master FPGA connects the memory to be tested to a serial port and the verification FPGA through the internal selection logic of the FPGA according to the requirements of the commands of the host computer, receives the level of the configuration completion pin DONE signal of the verification FPGA, and performs a reset operation on the verification FPGA. The configuration memory is used for configuring the master FPGA. The test system provided by the invention can meet the testing requirements of a memory circuit for FPGA configuration for long-time heat preservation in a low temperature environment, solves the problem that automatic test equipment has time limit and improves the test efficiency and accuracy of the configuration memory under the condition of testing at a low temperature for a long time.

Description

technical field [0001] The invention relates to a test system for a memory circuit configured with an SRAM FPGA and an implementation method thereof, especially for the test of the memory circuit in a low-temperature environment, and belongs to the technical field of integrated circuits. Background technique [0002] The SRAM-type FPGA determines its specific functions through the SRAM configuration bits all over the FPGA circuit. The bitstream set of these configuration bits is called bitstream. The memory circuit used for SRAM FPGA configuration is a rewritable, non-volatile online programmable memory circuit, which can store the FPGA configuration code stream in it to realize the functional configuration of the FPGA circuit. In the application system, it is generally used in conjunction with FPGA. [0003] The storage bank of the memory circuit used for SRAM FPGA configuration consists of multiple Flash modules to form a Flash array. Control and JTAG interface circuits ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/56
CPCG11C29/56
Inventor 李琦陈雷李学武张彦龙孙华波张帆肖阳刘进祁逸李申
Owner BEIJING MXTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products