Doping preparation and repair method for graphene

Abstract

The invention belongs to the field of semiconductor preparation and discloses a doping preparation and repair method for graphene. The method comprises the following steps: a graphene film grows on aspecific substrate with a CVD method; the graphene film is transferred to the surface of a required substrate, and graphene is etched in a required shape by oxygen plasma; N-type or P-type element doping is performed on graphene with an MPCVD method, and semiconductor graphene is repaired during doping. The prepared semiconductor graphene is applicable to wider substrates, concentration of dopingelements is controllable, part of graphene defects in a semiconductor can be overcome by repairing, a semiconductor graphene film with a certain area can be formed by flaky semiconductor graphene andhas lower impedance and shorter response time.

Description

technical field [0001] The invention belongs to the technical field of semiconductor preparation, and in particular relates to a method for preparing and repairing graphene doping. Background technique [0002] Graphene is a two-dimensional material composed of a single layer of C atoms. Due to its excellent electrical and mechanical properties, graphene has become one of the candidate materials to replace silicon in the post-Moore era. However, intrinsic graphene is a zero-bandgap semiconductor or semimetal, which limits the application and development of graphene in the semiconductor field. Through lattice doping, some carbon atoms in graphene are replaced with other atoms, so that the doped graphene has the property of many electrons or holes, that is, N-type or P-type doped semiconductor graphene is obtained, and The semiconductor graphene doped by lattice has stable performance and has great prospects for industrial application. [0003] Generally, in the application ...

AI Technical Summary

Problems solved by technology

The present invention prepares high-quality and large-size graphene film by CVD method, firstly ensures that the quality of graphene is intact, and then performs doping by MPCVD method, the reaction temperature is low, the applicable base materials are more extensive, and the doping concentration is easy to control, and finally the The doped graphene is preferably repaired, which can effectively solve the problems of graphene prone to surface wrinkles, incomplete plane dimensions, and surface attachment impurities during the transfer and doping process

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