A gete-based complementary resistive memory and its preparation method

A resistive memory, complementary technology, applied in electrical components and other directions, can solve problems such as cross-talk of resistive devices, and achieve the effects of easy high-density integration, low manufacturing cost, and easy control of the manufacturing process.

Active Publication Date: 2020-04-03
HUBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a GeTe-based complementary resistive memory and its preparation method to solve the problem of crosstalk of resistive memory devices.

Method used

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  • A gete-based complementary resistive memory and its preparation method
  • A gete-based complementary resistive memory and its preparation method

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Experimental program
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Embodiment 1

[0032] Such as figure 1 As shown, a GeTe-based complementary resistive variable memory of the present embodiment includes a bottom conductive electrode 3; a GeTe thin film dielectric layer 2 on the upper surface of the bottom conductive electrode; a GeTe thin film dielectric layer on the upper surface Top conductive electrode 1;

[0033] The bottom conductive electrode 3 is made of TiN, has a thickness of 200nm, is rectangular in shape, and has a side length of 0.4 μm;

[0034] The GeTe thin film dielectric layer 2 has a thickness of 20 nm, a rectangular shape, and a side length of 0.4 μm;

[0035] The top conductive electrode 1 is made of Pt, has a thickness of 250 nm, and is rectangular in shape with a side length of 0.4 μm.

[0036] The preparation method of the above-mentioned GeTe-based complementary resistive memory comprises the following steps:

[0037] The bottom conductive electrode is prepared on the base; a GeTe thin film dielectric layer is prepared on the uppe...

Embodiment 2

[0042] A GeTe-based complementary RRAM in this embodiment includes a bottom conductive electrode; a GeTe thin film dielectric layer disposed on the upper surface of the bottom conductive electrode; and a top conductive electrode disposed on the upper surface of the GeTe thin film dielectric layer.

[0043] The bottom conductive electrode is made of TiN with a thickness of 200 nm and a rectangular shape with a side length of 0.6 μm.

[0044] The dielectric layer of the GeTe thin film has a thickness of 20 nm and a rectangular shape with a side length of 0.6 μm.

[0045] The top conductive electrode is made of Pt, has a thickness of 250 nm, and is rectangular in shape with a side length of 0.6 μm.

[0046] The preparation method of the above-mentioned GeTe-based complementary resistive variable memory in this embodiment includes the following steps: preparing the bottom conductive electrode on the substrate; preparing a GeTe thin film dielectric layer on the upper surface of the...

Embodiment 3

[0051] A GeTe-based complementary RRAM in this embodiment includes a bottom conductive electrode; a GeTe thin film dielectric layer on the upper surface of the bottom conductive electrode; and a top conductive electrode on the upper surface of the GeTe thin film dielectric layer.

[0052] The bottom conductive electrode is made of TiN with a thickness of 200 nm and a rectangular shape with a side length of 0.8 μm.

[0053] The dielectric layer of the GeTe thin film has a thickness of 20 nm and a rectangular shape with a side length of 0.8 μm.

[0054] The top conductive electrode is made of Pt, has a thickness of 250 nm, and is rectangular in shape with a side length of 0.8 μm.

[0055] The preparation method of the above-mentioned GeTe-based complementary resistive memory comprises the following steps:

[0056] The bottom conductive electrode is prepared on the substrate; a GeTe thin film medium layer is prepared on the upper surface of the bottom conductive electrode; a top...

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Abstract

The invention discloses a GeTe-based complementary resistive variable memory and a preparation method thereof, and relates to the field of novel micro-nano electronic materials and functional devices. The complementary resistive variable memory of the present invention comprises a bottom conductive electrode; a GeTe thin film dielectric layer arranged on the upper surface of the bottom conductive electrode; a top layer conductive electrode arranged on the upper surface of the GeTe thin film dielectric layer, wherein the bottom conductive electrode is a GeTe thin film dielectric layer and the top conductive electrode are prepared by magnetron sputtering. The invention realizes the complementary resistive switching function through electrical excitation and current limiting to make the GeTe thin film dielectric layer switch in the resistive state. The memory proposed by the invention effectively solves the current crosstalk problem in the cross-array of the resistive variable memory, and has the characteristics of simple preparation method, low cost, stable performance, and good scalability. Non-volatile memory has great development potential and application value.

Description

technical field [0001] The invention relates to the field of novel micro-nano electronic materials and functional devices, in particular to a GeTe-based complementary resistive memory and a preparation method thereof. Background technique [0002] Traditional flash memory technology will face a series of technical limitations and theoretical limits after shrinking to a technology node below 20nm, and it is difficult to meet the ultra-high-density storage requirements. Therefore, it is of great significance and value to develop new storage technologies. At present, the resistive memory device developed based on the electroresistive effect has become a strong competitor for the next generation of non-volatile memory technology due to its simple structure, fast response speed, low operating power consumption, easy integration and non-volatility. with broadly application foreground. [0003] The main way to miniaturize resistive memory devices and achieve ultra-high density int...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/801H10N70/8828H10N70/026
Inventor 王浩何玉立马国坤陈钦陈傲刘春雷
Owner HUBEI UNIV
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