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44results about How to "Improve shrinkability" patented technology

Substation optical cable

The invention discloses a substation optical cable and belongs to the technical field of optical cables. The substation optical cable comprises an optical cable outer sheath; the inner end of the optical cable outer sheath is connected with an elastic buffering layer; the inner end of the elastic buffering layer is connected with a first flame-retardant layer; the inner end of the first flame-retardant layer is connected with a water-resisting layer; the inner end of the water-resisting layer is connected with a second flame-retardant layer; the inner end of the second flame-retardant layer isconnected with an optical cable inner tube; a plurality of cable cores in an annular array are arranged in the optical cable inner tube; metal phosphated steel wire reinforcing cores are arranged atthe center of the optical cable inner tube; the metal phosphated steel wire reinforcing cores are arranged between the plurality of cable cores; the optical cable inner tube is filled with grease; andthe cable cores are filled with a plurality of optical fibers; the outer end of the optical cable outer sheath is fixedly connected with a plurality of uniformly-distributed fixing sleeves; and therefore, the tensile strength and waterproofness of the optical cable can be improved, a condition that the optical cable is fractured and is subject to water infiltration due to natural environment andother external force factors can be almost avoided, and therefore, the stability and safety of the work of the optic cable can be improved.
Owner:TIANJIN XINMAO SCI & TECH

Complementary type resistive random access memory based on GeTe and preparation method thereof

ActiveCN108666419ASimple structureSolving Current Crosstalk ProblemsElectrical apparatusMicro nanoElectricity
The invention discloses a complementary type resistive random access memory based on GeTe and a preparation method thereof, and relates to the fields of novel micro-nano electronic materials and functional devices. The complementary type resistive random access memory disclosed by the invention comprises a bottom conducting electrode, a GeTe film dielectric layer arranged on the upper surface of the bottom conducting electrode and a top conducting electrode arranged on the upper surface of the GeTe film dielectric layer, wherein the bottom conducting electrode, the GeTe film dielectric layer and the top conducting electrode are prepared and obtained through a magnetron sputtering method. Resistance state switching occurs on the GeTe film dielectric layer to realize a complementary type resistive random access function through electric excitation and limiting current. The memory provided by the invention effectively solves the problem of current crosstalk in a cross array of the resistive random access memory, has the characteristics of simple preparation method, low cost, stable performance, high scaling performance and the like, and has excellent development potentials and application values in the aspect of developing nanoscaled nonvolatile memories with high memory density and low power consumption.
Owner:HUBEI UNIV
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