Hafnium oxide-based ferroelectric capacitor and preparation method thereof

A ferroelectric capacitor and hafnium oxide technology, applied in capacitors, circuits, electrical components, etc., can solve the problems of thin film electrical performance degradation, large leakage current of ferroelectric capacitors, and needs to be developed, etc., and achieves mature deposition and etching processes. The effect of resistivity reduction and low power consumption

Pending Publication Date: 2022-01-18
XIANGTAN UNIV
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

However, during the crystallization annealing of HfO2 film, it is easy to react with TiN and TaN electrodes to form an interface layer and element diffusion, which leads to the degradation of the electrical properties of the film; when the thickness of the HfO2 film is further reduced, these effects will be more prominent
On the other hand, although ferroelectric capacitors such as Pt / FE-HfO2 / Pt, Ir / FE-HfO2 / Ir, Au / FE-HfO2 / Au, W / FE-HfO2 / W also show good ferroelectric properties , but inert metals such as Pt, Ir and Au are difficult to etch, and the leakage current of W / FE-HfO2 / W ferroelectric capacitors is relatively large
[0006] Based on the above problems, the structure and preparation process of hafnium oxide-based ferroelectric capacitors with good process compatibility, excellent ferroelectric properties and high electrical reliability are still to be developed

Method used

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  • Hafnium oxide-based ferroelectric capacitor and preparation method thereof
  • Hafnium oxide-based ferroelectric capacitor and preparation method thereof
  • Hafnium oxide-based ferroelectric capacitor and preparation method thereof

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preparation example Construction

[0069] A preparation method of a hafnium oxide-based ferroelectric capacitor proposed by an embodiment of the present invention, such as figure 2 shown, including the following steps:

[0070] S0, preparing the substrate 9;

[0071] Among them, the substrate 9 is prepared on p-type lightly doped silicon with CMOS addressing, selection and logic control circuits 1, interlayer dielectric 2 is deposited and the planarization process is completed. It can be done in two ways, one is based on the front-end process, that is, the ferroelectric capacitor is embedded before the back-end multi-layer metal wiring process, and after the CMOS addressing, selection and logic control circuits are prepared, the deposition of the first layer of interlayer dielectric is completed And the planarization process, the other is based on the back-end process, that is, the ferroelectric capacitor is embedded in the back-end multi-layer metal wiring process, after the CMOS addressing, selection and lo...

Embodiment 1

[0084] A method for preparing a hafnium oxide-based ferroelectric capacitor provided by an embodiment of the present invention includes the following steps:

[0085] 1) Based on the front-end process, that is, before the ferroelectric capacitor is embedded in the back-end multi-layer metal wiring process, after preparing CMOS addressing, selection and logic control circuits, prepare CMOS addressing, selection and logic control circuits on p-type lightly doped silicon 1. Deposit the interlayer dielectric 2 and complete the planarization process.

[0086] 2) 10nmTi and 50nmTiN are successively deposited on the substrate 9 by magnetron sputtering method as the diffusion barrier layer 3a or bonding layer 3b (such as figure 1 shown);

[0087] 3) Deposit the first layer of bottom electrode 4 made of W material on the diffusion barrier layer 3a or the bonding layer 3b by magnetron sputtering method, with a thickness of 50nm, wherein the first layer of bottom electrode 4 is used as a...

Embodiment 2

[0094] A method for preparing a hafnium oxide-based ferroelectric capacitor provided by an embodiment of the present invention includes the following steps:

[0095] 1) Based on the back-end process, that is, after the ferroelectric capacitor is embedded in the back-end multi-layer metal wiring process, after the CMOS addressing, selection and logic control circuits and multi-layer metal wiring process are completed, CMOS is prepared on p-type lightly doped silicon Addressing, selection and logic control circuit 1, deposition of interlayer dielectric 2 and completion of planarization process.

[0096] 2) 10nmTa and 80nmTaN are successively deposited on the substrate 9 by magnetron sputtering as the diffusion barrier layer 3a or bonding layer 3b (such as figure 1 shown);

[0097] 3) Deposit the first layer of bottom electrode 4 made of Cu material on the diffusion barrier layer 3a or the bonding layer 3b by magnetron sputtering method, with a thickness of 100nm, wherein the fi...

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Abstract

The invention relates to a hafnium oxide-based ferroelectric capacitor and a preparation method thereof. The ferroelectric capacitor comprises a first-layer bottom electrode (4), a second-layer bottom electrode (5), a hafnium oxide-based ferroelectric film (6b), a first-layer top electrode (7), a second-layer top electrode (8) and a substrate (9) which are sequentially stacked from bottom to top. The first layer bottom electrode (4) and the second layer top electrode (8) are conductive layers; and the second layer bottom electrode (5) and the first layer top electrode (7) are electrodes. The second layer bottom electrode (5) and the first layer top electrode (7) are both HfNx (0 < x <= 1.1), and the second layer bottom electrode (5) and the first layer top electrode (7) are the same in thickness; and the substrate comprises silicon, a CMOS addressing, selection and logic control circuit (1), a metal electrode and an interlayer medium (2). The ferroelectric capacitor disclosed by the invention has relatively good micro-shrinkage performance and excellent ferroelectric performance.

Description

[0001] This application is a divisional application of a patent application entitled "A Hafnium Oxide-Based Ferroelectric Capacitor and Its Preparation Method". The filing date of the original application is March 26, 2019, and the application number is 201910233614.7. technical field [0002] The invention belongs to the field of integrated circuit technology and relates to an integration technology of ferroelectric memory, in particular to a hafnium oxide-based ferroelectric capacitor and a preparation method thereof. Background technique [0003] Ferroelectric memory (FRAM) is a very promising class of next-generation memory technology, and has been the focus of people's attention. FRAM has the characteristics of non-volatility, low power consumption, resistance to erasure and write fatigue, fast read and write speed, and strong radiation resistance. It has been widely used in RFID, instrumentation, PLC control, and medical equipment. It integrates ferroelectric capacitor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11507H01L49/02
CPCH01L28/40H01L28/75H10B53/30
Inventor 廖敏曾斌建周益春廖佳佳彭强祥
Owner XIANGTAN UNIV
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